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dc.contributor.advisorDi Sabatino, Marisa
dc.contributor.authorPenhaso Martins, Joao Manuel
dc.date.accessioned2018-04-16T14:01:30Z
dc.date.available2018-04-16T14:01:30Z
dc.date.created2016-01-21
dc.date.issued2016
dc.identifierntnudaim:14395
dc.identifier.urihttp://hdl.handle.net/11250/2494322
dc.description.abstractAn alternative method to determine oxygen concentration in industrial monocrystalline silicon has been developed and tested, resorting to statistical analysis and modeling. The model has been applied to different set samples, with a prediction accuracy varying between 90% and 95%. This model works on the assumption of a very effective heat treatment for thermal donor killing and similar thermal history of the produced/analyzed ingots.
dc.languageeng
dc.publisherNTNU
dc.subjectDiverse studier ved NT
dc.titleDevelopment of a method to determine oxygen distribution in industrial monocrystalline silicon ingots
dc.typeMaster thesis


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