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dc.contributor.authorIlyukhina, Liudmila Igorevna
dc.contributor.authorSunde, Svein
dc.contributor.authorRichard, Haverkamp
dc.date.accessioned2018-03-05T15:04:11Z
dc.date.available2018-03-05T15:04:11Z
dc.date.created2018-01-19T16:09:07Z
dc.date.issued2017
dc.identifier.citationJournal of the Electrochemical Society. 2017, 164 (14), F1662-F1670.nb_NO
dc.identifier.issn0013-4651
dc.identifier.urihttp://hdl.handle.net/11250/2488748
dc.description.abstractThe nature of the electronic structure of electrochemically formed iridium oxide films (EIROF) is investigated by in-situ conductivity measurements in an electrochemical cell and ex-situ current-sensing atomic force microscopy (CS-AFM). A direct demonstration of changes in the conductivity for electrochemically formed iridium oxide films (EIROF) with the applied potential of EIROF electrodes in an electrochemical cell is presented. The in-situ conductivity shows a single step-like change at a potential of approximately 1.2V1.2V in 0.5moldm−30.5moldm−3 H2SO4 vs. a reversible hydrogen reference electrode. The change in conductivity is also reflected in results of ex-situ CS-AFM for EIROF electrodes emersed at different potentials. At an emersion potential of 0V0V the CS-AFM current-voltage characteristics are non-linear and similar to those of diodes. At an emersion potential of 1.6V1.6V the CS-AFM current-voltage characteristics are approximately linear, consistent with metallic behavior. Mott-Schottky analysis shows that at low potentials the oxide behaves as a p-type semiconductor with a flatband potential approximately 500mV500mV below the transition to high conductivity from the in-situ conductivity measurements. These results allow for an interpretation of changes in the relative magnitudes of the III/IV and IV/V (or IV/VI) voltammetric peaks during film growth through a block-release behavior involving space-charge layers in the oxide.nb_NO
dc.language.isoengnb_NO
dc.publisherElectrochemical Societynb_NO
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.titleElectronic structure and growth of electrochemically formed iridium oxide filmsnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.source.pagenumberF1-F9nb_NO
dc.source.volume64nb_NO
dc.source.journalJournal of the Electrochemical Societynb_NO
dc.source.issue14nb_NO
dc.identifier.doi10.1149/2.1351714jes
dc.identifier.cristin1547761
dc.description.localcode© The Author(s) 2017. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited.nb_NO
cristin.unitcode194,0,0,0
cristin.unitcode194,66,35,0
cristin.unitnameNorges teknisk-naturvitenskapelige universitet
cristin.unitnameInstitutt for materialteknologi
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode2


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