dc.contributor.author | Ilyukhina, Liudmila Igorevna | |
dc.contributor.author | Sunde, Svein | |
dc.contributor.author | Richard, Haverkamp | |
dc.date.accessioned | 2018-03-05T15:04:11Z | |
dc.date.available | 2018-03-05T15:04:11Z | |
dc.date.created | 2018-01-19T16:09:07Z | |
dc.date.issued | 2017 | |
dc.identifier.citation | Journal of the Electrochemical Society. 2017, 164 (14), F1662-F1670. | nb_NO |
dc.identifier.issn | 0013-4651 | |
dc.identifier.uri | http://hdl.handle.net/11250/2488748 | |
dc.description.abstract | The nature of the electronic structure of electrochemically formed iridium oxide films (EIROF) is investigated by in-situ conductivity measurements in an electrochemical cell and ex-situ current-sensing atomic force microscopy (CS-AFM). A direct demonstration of changes in the conductivity for electrochemically formed iridium oxide films (EIROF) with the applied potential of EIROF electrodes in an electrochemical cell is presented. The in-situ conductivity shows a single step-like change at a potential of approximately 1.2V1.2V in 0.5moldm−30.5moldm−3 H2SO4 vs. a reversible hydrogen reference electrode. The change in conductivity is also reflected in results of ex-situ CS-AFM for EIROF electrodes emersed at different potentials. At an emersion potential of 0V0V the CS-AFM current-voltage characteristics are non-linear and similar to those of diodes. At an emersion potential of 1.6V1.6V the CS-AFM current-voltage characteristics are approximately linear, consistent with metallic behavior. Mott-Schottky analysis shows that at low potentials the oxide behaves as a p-type semiconductor with a flatband potential approximately 500mV500mV below the transition to high conductivity from the in-situ conductivity measurements. These results allow for an interpretation of changes in the relative magnitudes of the III/IV and IV/V (or IV/VI) voltammetric peaks during film growth through a block-release behavior involving space-charge layers in the oxide. | nb_NO |
dc.language.iso | eng | nb_NO |
dc.publisher | Electrochemical Society | nb_NO |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.title | Electronic structure and growth of electrochemically formed iridium oxide films | nb_NO |
dc.type | Journal article | nb_NO |
dc.type | Peer reviewed | nb_NO |
dc.description.version | acceptedVersion | nb_NO |
dc.source.pagenumber | F1-F9 | nb_NO |
dc.source.volume | 64 | nb_NO |
dc.source.journal | Journal of the Electrochemical Society | nb_NO |
dc.source.issue | 14 | nb_NO |
dc.identifier.doi | 10.1149/2.1351714jes | |
dc.identifier.cristin | 1547761 | |
dc.description.localcode | © The Author(s) 2017. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. | nb_NO |
cristin.unitcode | 194,0,0,0 | |
cristin.unitcode | 194,66,35,0 | |
cristin.unitname | Norges teknisk-naturvitenskapelige universitet | |
cristin.unitname | Institutt for materialteknologi | |
cristin.ispublished | true | |
cristin.fulltext | postprint | |
cristin.qualitycode | 2 | |