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dc.contributor.authorPatra, Saroj Kumar
dc.contributor.authorTran, Thanh-Nam
dc.contributor.authorVines, Lasse
dc.contributor.authorKolevatov, Ilia
dc.contributor.authorMonakhov, Edouard
dc.contributor.authorFimland, Bjørn-Ove
dc.date.accessioned2018-02-06T10:16:49Z
dc.date.available2018-02-06T10:16:49Z
dc.date.created2017-02-20T09:51:41Z
dc.date.issued2017
dc.identifier.citationJournal of Crystal Growth. 2017, 463 116-122.nb_NO
dc.identifier.issn0022-0248
dc.identifier.urihttp://hdl.handle.net/11250/2482891
dc.description.abstractIncorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al0.9Ga0.1As0.06Sb0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room temperature Hall effect measurements, and dopant densities from secondary ion mass spectrometry depth profiling. An undoped Al0.3Ga0.7As cap layer and side wall passivation were used to reduce oxidation and improve accuracy in Hall effect measurements. The measurements on Be-doped samples revealed high doping efficiency and the carrier concentration varied linearly with dopant density up to the highest Be dopant density of 2.9 × 1019 cm−3, whereas for Te doped samples the doping efficiency was in general low and the carrier concentration saturated for Te-dopant densities above 8.0 × 1018 cm−3. The low doping efficiency in Te-doped Al0.9Ga0.1As0.06Sb0.94 layer was studied by deep-level transient spectroscopy, revealing existence of deep trap levels and related DX-centers which explains the low doping efficiency.nb_NO
dc.language.isoengnb_NO
dc.publisherElseviernb_NO
dc.titleDopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxynb_NO
dc.typeJournal articlenb_NO
dc.description.versionsubmittedVersionnb_NO
dc.source.pagenumber116-122nb_NO
dc.source.volume463nb_NO
dc.source.journalJournal of Crystal Growthnb_NO
dc.identifier.doi10.1016/j.jcrysgro.2017.01.035
dc.identifier.cristin1452128
dc.relation.projectNorges forskningsråd: 177610/V30nb_NO
dc.description.localcodeThis is a submitted manuscript of an article published by Elsevier Ltd in Journal of Crystal Growth, 10 February 2017.nb_NO
cristin.unitcode194,63,35,0
cristin.unitnameInstitutt for elektroniske systemer
cristin.ispublishedtrue
cristin.fulltextpreprint
cristin.qualitycode1


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