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dc.contributor.authorAhtapodov, Lyubomir
dc.contributor.authorKauko, H
dc.contributor.authorMunshi, A Mazid
dc.contributor.authorFimland, Bjørn-Ove
dc.contributor.authorVan Helvoort, Antonius
dc.contributor.authorWeman, Helge
dc.date.accessioned2018-01-02T10:15:50Z
dc.date.available2018-01-02T10:15:50Z
dc.date.created2017-12-30T14:29:21Z
dc.date.issued2017
dc.identifier.citationJournal of Applied Physics. 2017, 122 .nb_NO
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11250/2473927
dc.description.abstractBy applying a correlated micro-photoluminescence spectroscopy and transmission electron microscopy (TEM) approach, we have utilized molecular beam epitaxy grown self-catalysed GaAs nanowires (NWs) with an axial GaAsSb insert to determine the band offsets at the crystal phase heterojunction between zinc blende (ZB) and wurtzite (WZ) GaAs. Two distinct PL emission bands originating from the ZB GaAsSb insert were identified. The lower energy PL emission allowed an independent verification of the maximum Sb molar fraction to be ∼30%, in agreement with quantitative high-angle annular dark field scanning TEM performed on the same single NW. The higher energy PL emission revealed a low temperature ZB/WZ band offset of 120 meV at the interface between the two GaAs crystal phases occurring at the upper boundary of the insert. Separate conduction and valence band offsets develop at a higher temperature due to the different temperature dependence of the ZB and WZ GaAs band gaps, but both offset values show a relatively little variation in the range of 10–150 K.nb_NO
dc.language.isoengnb_NO
dc.publisherAIP Publishingnb_NO
dc.relation.urihttp://aip.scitation.org/doi/full/10.1063/1.4991884
dc.titleDetermination of GaAs zinc blende/wurtzite band offsets utilizing GaAs nanowires with an axial GaAsSb insertnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionpublishedVersionnb_NO
dc.source.pagenumber7nb_NO
dc.source.volume122nb_NO
dc.source.journalJournal of Applied Physicsnb_NO
dc.identifier.doi10.1063/1.4991884
dc.identifier.cristin1533029
dc.relation.projectNorges forskningsråd: 239206nb_NO
dc.relation.projectNORTEM: 197405nb_NO
dc.relation.projectNorges forskningsråd: 214235nb_NO
dc.description.localcodePublished by AIP Publishing. Locked until 28.12.2018 due to copyright restrictions. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://aip.scitation.org/doi/10.1063/1.4960193http://aip.scitation.org/doi/10.1063/1.4991884nb_NO
cristin.unitcode194,63,35,0
cristin.unitcode194,66,20,0
cristin.unitnameInstitutt for elektroniske systemer
cristin.unitnameInstitutt for fysikk
cristin.ispublishedtrue
cristin.fulltextpreprint
cristin.qualitycode1


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