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dc.contributor.authorGorbachenya, Konstantin N.
dc.contributor.authorKisel, Victor E.
dc.contributor.authorYasukevich, Anatoly S.
dc.contributor.authorTolstik, Nikolai
dc.contributor.authorKarhu, Eric Andrew
dc.contributor.authorFurtula, Vedran
dc.contributor.authorSorokin, Evgeni
dc.contributor.authorMaltsev, VA
dc.contributor.authorleonyuk, N.
dc.contributor.authorGalinis, A.
dc.contributor.authorLipinskas, T.
dc.contributor.authorGibson, Ursula
dc.contributor.authorSorokina, Irina T
dc.contributor.authorKuleshov, Nikolai V.
dc.date.accessioned2017-11-23T08:04:10Z
dc.date.available2017-11-23T08:04:10Z
dc.date.created2017-11-01T22:20:55Z
dc.date.issued2017
dc.identifier.isbn978-1-4673-7475-0
dc.identifier.urihttp://hdl.handle.net/11250/2467670
dc.language.isoengnb_NO
dc.publisherIEEEnb_NO
dc.relation.ispartofCLEO/Europe 2017 Technical digest
dc.titleEr,Yb:GdAl3(BO3)4 laser passively Q-switched by MBE-grown Cr:ZnS thin filmsnb_NO
dc.typeChapternb_NO
dc.typePeer reviewednb_NO
dc.description.versionsubmittedVersionnb_NO
dc.identifier.cristin1510059
dc.relation.projectNorges forskningsråd: 219686nb_NO
dc.description.localcode© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.nb_NO
cristin.unitcode194,66,20,0
cristin.unitnameInstitutt for fysikk
cristin.ispublishedtrue
cristin.fulltextpreprint


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