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dc.contributor.authorSkjærvø, Sandra Helen
dc.contributor.authorTjønneland Wefring, Espen
dc.contributor.authorNesdal, Silje K.
dc.contributor.authorGaukås, Nikolai Helth
dc.contributor.authorOlsen, Gerhard Henning
dc.contributor.authorGlaum, Julia
dc.contributor.authorTybell, Per Thomas Martin
dc.contributor.authorSelbach, Sverre Magnus
dc.identifier.citationNature Communications. 2016, 7 .nb_NO
dc.description.abstractHexagonal manganites, h-RMnO3 (R=Sc, Y, Ho–Lu), have been intensively studied for their multiferroic properties, magnetoelectric coupling, topological defects and electrically conducting domain walls. Although point defects strongly affect the conductivity of transition metal oxides, the defect chemistry of h-RMnO3 has received little attention. We use a combination of experiments and first principles electronic structure calculations to elucidate the effect of interstitial oxygen anions, Oi, on the electrical and structural properties of h-YMnO3. Enthalpy stabilized interstitial oxygen anions are shown to be the main source of p-type electronic conductivity, without reducing the spontaneous ferroelectric polarization. A low energy barrier interstitialcy mechanism is inferred from Density Functional Theory calculations to be the microscopic migration path of Oi. Since the Oi content governs the concentration of charge carrier holes, controlling the thermal and atmospheric history provides a simple and fully reversible way of tuning the electrical properties of h-RMnO3.nb_NO
dc.publisherNature Publishing Groupnb_NO
dc.rightsNavngivelse 4.0 Internasjonal*
dc.titleInterstitial oxygen as a source of p-type conductivity in hexagonal manganitesnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.source.journalNature Communicationsnb_NO
dc.relation.projectNotur/NorStore: NN9264Knb_NO
dc.description.localcodeThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit
cristin.unitnameInstitutt for materialteknologi
cristin.unitnameInstitutt for elektroniske systemer

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Navngivelse 4.0 Internasjonal
Except where otherwise noted, this item's license is described as Navngivelse 4.0 Internasjonal