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dc.contributor.authorKim, Young-Min
dc.contributor.authorMorozovska, Anna
dc.contributor.authorEliseev, Eugene
dc.contributor.authorOxley, Mark P.
dc.contributor.authorMishra, Rohan
dc.contributor.authorSelbach, Sverre Magnus
dc.contributor.authorGrande, Tor
dc.contributor.authorPantelides, S. T.
dc.contributor.authorKalinin, Sergei V.
dc.contributor.authorBorisevich, Albina Y.
dc.date.accessioned2017-11-09T14:05:53Z
dc.date.available2017-11-09T14:05:53Z
dc.date.created2015-01-15T19:05:46Z
dc.date.issued2014
dc.identifier.citationNature Materials. 2014, 13 1019-1025.nb_NO
dc.identifier.issn1476-1122
dc.identifier.urihttp://hdl.handle.net/11250/2465331
dc.description.abstractThe development of interface-based magnetoelectric devices necessitates an understanding of polarization-mediated electronic phenomena and atomistic polarization screening mechanisms. In this work, the LSMO/BFO interface is studied on a single unit-cell level through a combination of direct order parameter mapping by scanning transmission electron microscopy and electron energy-loss spectroscopy. We demonstrate an unexpected ∼5% lattice expansion for regions with negative polarization charge, with a concurrent anomalous decrease of the Mn valence and change in oxygen K-edge intensity. We interpret this behaviour as direct evidence for screening by oxygen vacancies. The vacancies are predominantly accumulated at the second atomic layer of BFO, reflecting the di erence of ionic conductivity between the components. This vacancy exclusion from the interface leads to the formation of a tail-to-tail domain wall. At the same time, purely electronic screening is realized for positive polarization charge, with insignificant changes in lattice and electronic properties. These results underline the non-trivial role of electrochemical phenomena in determining the functional properties of oxide interfaces. Furthermore, these behaviours suggest that vacancy dynamics and exclusion play major roles in determining interface functionality in oxide multilayers, providing clear implications for novel functionalities in potential electronic devices.nb_NO
dc.language.isoengnb_NO
dc.publisherNature Publishing Groupnb_NO
dc.titleDirect observation of ferroelectric field effect and vacancy-controlled screening at the BiFeO3/LaxSr1−xMnO3 interfacenb_NO
dc.typeJournal articlenb_NO
dc.description.versionsubmittedVersionnb_NO
dc.subject.nsiVDP::Teknologi: 500nb_NO
dc.subject.nsiVDP::Technology: 500nb_NO
dc.source.pagenumber1019-1025nb_NO
dc.source.volume13nb_NO
dc.source.journalNature Materialsnb_NO
dc.identifier.doi10.1038/NMAT4058
dc.identifier.cristin1199001
dc.description.localcode© 2014 Nature Publishing Group. This is the authors' manuscript to the article (preprint).nb_NO
cristin.unitcode194,66,35,0
cristin.unitnameInstitutt for materialteknologi
cristin.ispublishedtrue
cristin.fulltextpreprint
cristin.qualitycode2


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