dc.contributor.advisor | Holmestad, Randi | nb_NO |
dc.contributor.advisor | Reenaas, Turid | nb_NO |
dc.contributor.advisor | Vullum, Per Erik | nb_NO |
dc.contributor.author | Nord, Magnus Kristofer | nb_NO |
dc.date.accessioned | 2014-12-19T13:17:01Z | |
dc.date.available | 2014-12-19T13:17:01Z | |
dc.date.created | 2011-09-15 | nb_NO |
dc.date.issued | 2011 | nb_NO |
dc.identifier | 441355 | nb_NO |
dc.identifier | ntnudaim:6602 | nb_NO |
dc.identifier.uri | http://hdl.handle.net/11250/246515 | |
dc.description.abstract | In this thesis the strain properties of two InAs/GaAs quantum dot intermediate band solar cell materials have been explored. Both samples were thin films grown on a (100) GaAs substrate. The quantum dot material was InAs, and the bulk material was GaAs. One sample had AlAs-cap, while the other had GaAs-cap. Geometrical phase analysis was used to study the strain. A higher degree of strain was found in the AlAs-capped sample. Negative strain was observed in directly above and below the quantum dots in both samples. A stacking fault in a quantum dot in the AlAs-capped sample was found to relax all the strain. Analysis of the chemical composition of the AlAs-capped sample was performed using HAADF-STEM and multislice analysis. This analysis found an average indium concentration inside the quantum dots of 25% +- 10%, with peaks up to 50%. | nb_NO |
dc.language | eng | nb_NO |
dc.publisher | Institutt for fysikk | nb_NO |
dc.subject | ntnudaim:6602 | no_NO |
dc.subject | MTFYMA fysikk og matematikk | no_NO |
dc.subject | Teknisk fysikk | no_NO |
dc.title | Quantitative (S)TEM analysis of intermediate band solar cell materials | nb_NO |
dc.type | Master thesis | nb_NO |
dc.source.pagenumber | 82 | nb_NO |
dc.contributor.department | Norges teknisk-naturvitenskapelige universitet, Fakultet for naturvitenskap og teknologi, Institutt for fysikk | nb_NO |