dc.contributor.author | Nærland, Tine Uberg | |
dc.contributor.author | Haug, Halvard | |
dc.contributor.author | Angelskår, Hallvard | |
dc.contributor.author | Søndenå, Rune | |
dc.contributor.author | Marstein, Erik Stensrud | |
dc.contributor.author | Arnberg, Lars | |
dc.date.accessioned | 2017-10-30T14:39:13Z | |
dc.date.available | 2017-10-30T14:39:13Z | |
dc.date.created | 2013-10-10T11:52:13Z | |
dc.date.issued | 2013 | |
dc.identifier.citation | IEEE Journal of Photovoltaics. 2013, 3 (4), 1265-1270. | nb_NO |
dc.identifier.issn | 2156-3381 | |
dc.identifier.uri | http://hdl.handle.net/11250/2462948 | |
dc.description.abstract | Twenty different boron-doped Czochralski silicon materials have been analyzed for light-induced degradation. The carrier lifetime degradation was monitored by an automated quasi-steady-state photoconductance setup with an externally controlled bias lamp for in-situ illumination between measurements. Logarithmic plots of the time-resolved lifetime decays clearly displayed the previously reported rapid and slow decays, but a satisfactory fit to a single exponential function could not be achieved. We found, however, that both decay curves, for all the investigated samples, can be fitted very well to the solution of a simple second-order rate equation. This indicates that the defect generation process can be described by second-order reaction kinetics. The new information is used to discuss the role of holes in the defect reaction and the rate-determining steps of the rapid and slow defect reactions. | nb_NO |
dc.language.iso | eng | nb_NO |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | nb_NO |
dc.title | Studying light-induced degradation by lifetime decay analysis: Excellent fit to solution of simple second-order rate equation | nb_NO |
dc.type | Journal article | nb_NO |
dc.type | Peer reviewed | nb_NO |
dc.description.version | acceptedVersion | nb_NO |
dc.source.pagenumber | 1265-1270 | nb_NO |
dc.source.volume | 3 | nb_NO |
dc.source.journal | IEEE Journal of Photovoltaics | nb_NO |
dc.source.issue | 4 | nb_NO |
dc.identifier.doi | 10.1109/JPHOTOV.2013.2278663 | |
dc.identifier.cristin | 1056694 | |
dc.relation.project | Norges forskningsråd: 181884 | nb_NO |
dc.description.localcode | © 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | nb_NO |
cristin.unitcode | 194,66,35,0 | |
cristin.unitname | Institutt for materialteknologi | |
cristin.ispublished | true | |
cristin.fulltext | postprint | |
cristin.qualitycode | 1 | |