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dc.contributor.authorAcharya, Shinjita
dc.contributor.authorTorgersen, Jan
dc.contributor.authorYongmin, Kim
dc.contributor.authorJoonsuk, Park
dc.contributor.authorSchindler, Peter
dc.contributor.authorDadlani, Anup
dc.contributor.authorWinterkorn, Martin
dc.contributor.authorXu, Shicheng
dc.contributor.authorWalch, Stephen
dc.contributor.authorUsui, Takane
dc.contributor.authorSchildknecht, Christian
dc.contributor.authorFritz, Prinz
dc.date.accessioned2017-10-25T14:00:31Z
dc.date.available2017-10-25T14:00:31Z
dc.date.created2017-03-26T16:27:58Z
dc.date.issued2016
dc.identifier.citationJournal of Materials Chemistry C. 2016, 4 1945-1952.nb_NO
dc.identifier.issn2050-7526
dc.identifier.urihttp://hdl.handle.net/11250/2462182
dc.description.abstractBarium oxide (BaO) is a critical component for a number of materials offering high dielectric constants, high proton conductivity as well as potential applicability in superconductivity. For these properties to keep pace with continuous device miniaturization, it is necessary to study thin film deposition of BaO. Atomic layer deposition (ALD) enables single atomic layer thickness control, conformality on complex shaped substrates, and the ability to precisely tune stoichiometry. Depositing multicomponent BaO containing ALD films in a self-limiting manner at low temperatures may extend the favorable bulk properties of these materials into the ultrathin film regime. Here we report the first temperature and dose independent thermal BaO deposition using a novel pyrrole based Ba precursor (py-Ba) and water (H2O) as the co-reactant. The growth per cycle (GPC) is constant at 0.45 Å with excellent self-terminating behavior. The films are smooth (root mean squared (RMS) roughness 2.1 Å) and contain minimal impurities at the lowest reported deposition temperatures for Ba containing films (180–210 °C). We further show conformal coating of non-planar substrates (aspect ratio ∼ 1 : 2.5) at step coverages above 90%. Intermixing TiO2 ALD layers, we deposited amorphous barium titanate with a dielectric constant of 35. The presented approach for infusing self-terminating BaO in multicomponent oxide films may facilitate tuning electrical and ionic properties in next-generation ultrathin devices.nb_NO
dc.language.isoengnb_NO
dc.publisherRoyal Society of Chemistrynb_NO
dc.relation.urihttp://pubs.rsc.org/en/Content/ArticleLanding/2016/TC/c5tc03561a#!divAbstract
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.titleSelf-limiting atomic layer deposition of barium oxide and barium titanate thin films using a novel pyrrole based precursornb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionpublishedVersionnb_NO
dc.subject.nsiVDP::Maskinfag: 570nb_NO
dc.subject.nsiVDP::Mechanical engineering: 570nb_NO
dc.source.pagenumber1945-1952nb_NO
dc.source.volume4nb_NO
dc.source.journalJournal of Materials Chemistry Cnb_NO
dc.identifier.doi10.1039/C5TC03561A
dc.identifier.cristin1461152
dc.description.localcodeThis article is licensed under a Creative Commons Attribution 3.0 Unported Licence (CC BY 3.0)nb_NO
cristin.unitcode194,64,50,0
cristin.unitnameInstitutt for produktutvikling og materialer
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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