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dc.contributor.authorTiwari, Subhadra
dc.contributor.authorMidtgård, Ole-Morten
dc.contributor.authorUndeland, Tore Marvin
dc.date.accessioned2017-03-29T11:51:52Z
dc.date.available2017-03-29T11:51:52Z
dc.date.created2016-12-23T12:55:45Z
dc.date.issued2016
dc.identifier.citationPower Electronics and Applications (EPE'16 ECCE Europe), 2016 18th European Conferencenb_NO
dc.identifier.isbn978-1-5090-1410-1
dc.identifier.urihttp://hdl.handle.net/11250/2436201
dc.description.abstractThis paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for motor drive applications. Both the modules have same packaging and voltage rating (1.2 kV). The three bridge legs of the modules are paralleled forming a single half-bridge configuration for achieving higher output power. Turn-on and turn-off switching energy losses are measured using a standard double pulse methodology. The conduction losses from the datasheet and the switching energy losses obtained from the laboratory measurements are used as a look up table input when simulating the detailed inverter losses in a three-phase motor drive inverter. The total inverter loss is plotted for different switching frequencies in order to illustrate the performance improvement that SiC MOSFETs can bring over Si IGBTs for a motor drive inverter from the efficiency point of view. The overall analysis gives an insight into how SiC MOSFET outperforms Si IGBT over all switching frequency ranges with the advantages becoming more pronounced at higher frequencies and temperatures.nb_NO
dc.language.isoengnb_NO
dc.publisherIEEEnb_NO
dc.relation.ispartofPower Electronics and Applications (EPE'16 ECCE Europe), 2016 18th European Conference
dc.subjectSilicon carbide, MOSFET, Insulated gate bipolar transistors, Silicon, Switches, Transient analysis, Loss measurementnb_NO
dc.titleSiC MOSFETs for future motor drive applicationsnb_NO
dc.typeChapternb_NO
dc.typeConference objectnb_NO
dc.typePeer reviewednb_NO
dc.source.pagenumber1-10nb_NO
dc.identifier.doi10.1109/EPE.2016.7695382
dc.identifier.cristin1417142
dc.description.localcode© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other worksnb_NO
cristin.unitcode194,63,20,0
cristin.unitnameInstitutt for elkraftteknikk
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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