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dc.contributor.advisorYtterdal, Trond
dc.contributor.advisorAndresen, Per Christian
dc.contributor.advisorHergot, Christian
dc.contributor.authorHernes, Marie Helene
dc.date.accessioned2016-10-03T14:00:45Z
dc.date.available2016-10-03T14:00:45Z
dc.date.created2016-07-08
dc.date.issued2016
dc.identifierntnudaim:15760
dc.identifier.urihttp://hdl.handle.net/11250/2412632
dc.description.abstractA device compact model is a mathematical description of a device, e.g. a transistor, in an integrated circuit. Compact models are designed to be a part of a larger simulation, and work together with a circuit model. For this reason errors in the device model will multiply throughout the simulation. Device model validation is thus an important prerequisite for simulating integrated circuits. In this thesis a comprehensive set of qualitative benchmark tests is developed and presented. In the course of device model testing, several hundred curves can be produced and have to be evaluated in terms of whether they behave as expected from the laws of physics. To facilitate this process a program that finds discontinuities in curves was implemented for this thesis.
dc.languageeng
dc.publisherNTNU
dc.subjectNanoteknologi, Nanoelektronikk
dc.titleChecking of Nanoscale Transistor Models
dc.typeMaster thesis
dc.source.pagenumber69


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