Blar i Institutt for elektroniske systemer på tidsskrift "Nanotechnology"
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Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils
(Journal article; Peer reviewed, 2017)We report on plasma-assisted molecular beam epitaxial growth of almost randomly oriented, uniformly tilted, and vertically aligned self-assembled GaN nanowires (NWs), respectively, on different types of polycrystalline Ti ... -
Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications
(Journal article; Peer reviewed, 2019)Epitaxially grown ternary III-arsenide-antimonide (III-As–Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based ... -
Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer
(Journal article; Peer reviewed, 2018)We report on the self-assembled growth of high-density and vertically-oriented n-doped GaN nanocolumns on graphene by radio-frequency plasma-assisted molecular beam epitaxy. Graphene was transferred to silica glass, which ...