Blar i Institutt for elektroniske systemer på tidsskrift "Crystal Growth & Design"

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    • AlGaN Nanowires Grown on SiO2/Si (100) Using Graphene as a Buffer Layer 

      Wang, Yunyu; Dheeraj, Dasa; Liu, Zhiqiang; Liang, Meng; Li, Yang; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Weman, Helge (Peer reviewed; Journal article, 2019)
      III-Nitride epitaxy is deeply dependent on the substrate and is difficult to grow on amorphous substrates because of the lattice mismatch limits. In this paper, graphene is employed as a buffer layer to assist AlGaN nanowire ...

    • Effect of polar (111)-oriented SrTiO3 on initial perovskite growth 

      Hallsteinsen, Ingrid; Nord, Magnus Kristofer; Bolstad, Torstein; Vullum, Per Erik; Boschker, Jos Emiel; Longo, Paulo; Takahashi, Ryota; Holmestad, Randi; Lippmaa, Mikk; Tybell, Per Thomas Martin (Journal article, 2016)
      In crystalline thin film growth a prerequisite is substrate surfaces with a stable and uniform structure and chemical composition. Various substrate treatments were used to obtain atomically smooth, step-and-terrace ...