Blar i Institutt for materialteknologi på tidsskrift "Nature Materials"

Viser treff 1-3 av 3

    • Conductivity control via minimally invasive anti-Frenkel defects in a functional oxide 

      Evans, Donald; Holstad, Theodor Secanell; Mosberg, Aleksander Buseth; Småbråten, Didrik Rene; Vullum, Per Erik; Dadlani, Anup; Shapovalov, Konstantin; Yan, Zewu; Bourret, Edith; Gao, David Zhe; Akola, Jaakko; Torgersen, Jan; Van Helvoort, Antonius; Selbach, Sverre Magnus; Meier, Dennis (Peer reviewed; Journal article, 2020)
      Utilizing quantum effects in complex oxides, such as magnetism, multiferroicity and superconductivity, requires atomic-level control of the material’s structure and composition. In contrast, the continuous conductivity ...

    • Direct observation of ferroelectric field effect and vacancy-controlled screening at the BiFeO3/LaxSr1−xMnO3 interface 

      Kim, Young-Min; Morozovska, Anna; Eliseev, Eugene; Oxley, Mark P.; Mishra, Rohan; Selbach, Sverre Magnus; Grande, Tor; Pantelides, S. T.; Kalinin, Sergei V.; Borisevich, Albina Y. (Journal article, 2014)
      The development of interface-based magnetoelectric devices necessitates an understanding of polarization-mediated electronic phenomena and atomistic polarization screening mechanisms. In this work, the LSMO/BFO interface ...

    • Functional electronic inversion layers at ferroelectric domain walls 

      Mundy, Julia; Schaab, Jakob; Kumagai, Yu; Cano, Andres; Stengel, Massimiliano; Krug, Ingo P.; Gottlob, Daniel G.; Doganay, Hattice; Holtz, Megan, E.; Held, Rainer; Yan, Zewu; Bourret, Edith; Schneider, Claus M.; Schlom, Darrel G.; Muller, David A.; Ramesh, Ramamoorthy; Spaldin, Nicola A.; Meier, Dennis Gerhard (Journal article; Peer reviewed, 2017)
      Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes ...