Blar i Institutt for fysikk på forfatter "Yan, Zewu"

Viser treff 1-8 av 8

    • Application of a long short-term memory for deconvoluting conductance contributions at charged ferroelectric domain walls 

      Holstad, Theodor Secanell; Ræder, Trygve Magnus; Evans, Donald; Småbråten, Didrik Rene; Krohns, Stephan; Schaab, Jakob; Yan, Zewu; Bourret, Edith; Helvoort, Antonius T. J. van; Grande, Tor; Selbach, Sverre Magnus; Agar, Joshua; Meier, Dennis Gerhard (Peer reviewed; Journal article, 2020)
      Ferroelectric domain walls are promising quasi-2D structures that can be leveraged for miniaturization of electronics components and new mechanisms to control electronic signals at the nanoscale. Despite the significant ...

    • Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor 

      Hunnestad, Kasper Aas; Hatzoglou, Constantinos; Zeeshan, Muhammad; Vullum, Per Erik; Yan, Zewu; Bourret, Edith; Van Helvoort, Antonius; Selbach, Sverre Magnus; Meier, Dennis (Peer reviewed; Journal article, 2022)
      The physical properties of semiconductors are controlled by chemical doping. In oxide semiconductors, small variations in the density of dopant atoms can completely change the local electric and magnetic responses caused ...

    • Conductivity control via minimally invasive anti-Frenkel defects in a functional oxide 

      Evans, Donald; Holstad, Theodor Secanell; Mosberg, Aleksander Buseth; Småbråten, Didrik Rene; Vullum, Per Erik; Dadlani, Anup; Shapovalov, Konstantin; Yan, Zewu; Bourret, Edith; Gao, David Zhe; Akola, Jaakko; Torgersen, Jan; Van Helvoort, Antonius; Selbach, Sverre Magnus; Meier, Dennis (Peer reviewed; Journal article, 2020)
      Utilizing quantum effects in complex oxides, such as magnetism, multiferroicity and superconductivity, requires atomic-level control of the material’s structure and composition. In contrast, the continuous conductivity ...

    • Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation 

      Roede, Erik Dobloug; Mosberg, Aleksander Buseth; Evans, Donald; Bourret, Edith; Yan, Zewu; Van Helvoort, Antonius; Meier, Dennis (Peer reviewed; Journal article, 2021)
      Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO3. Surface charging is achieved by local ion (positive charging) ...

    • Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation 

      Roede, Erik Dobloug; Mosberg, Aleksander B.; Evans, Donald M.; Bourret, Edith; Yan, Zewu; Helvoort, Antonius T. J. van; Meier, Dennis Gerhard (Peer reviewed; Journal article, 2021)
      Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO3. Surface charging is achieved by local ion (positive charging) ...

    • FIB lift-out of conducting ferroelectric domain walls in hexagonal manganites 

      Mosberg, Aleksander Buseth; Roede, Erik Dobloug; Evans, Donald; Holstad, Theodor S.; Bourret, Edith; Yan, Zewu; Van Helvoort, Antonius; Meier, Dennis (Journal article; Peer reviewed, 2019)
      A focused ion beam (FIB) methodology is developed to lift out suitable specimens containing charged domain walls in improper ferroelectric ErMnO3. The FIB procedure allows for extracting domain wall sections with well-defined ...

    • FIB lift-out of conducting ferroelectric domain walls in hexagonal manganites 

      Evans, Donald; Meier, Dennis; Mosberg, Aleksander Buseth; Roede, Erik Dobloug; Holstad, Theodor S.; Bourret, Edith; Yan, Zewu; Van Helvoort, Antonius (Journal article; Peer reviewed, 2019)
      A focused ion beam (FIB) methodology is developed to lift out suitable specimens containing charged domain walls in improper ferroelectric ErMnO3. The FIB procedure allows for extracting domain wall sections with well-defined ...

    • Observation of Electric-Field-Induced Structural Dislocations in a Ferroelectric Oxide 

      Evans, Donald; Småbråten, Didrik Rene; Holstad, Theodor Secanell; Vullum, Per Erik; Mosberg, Aleksander Buseth; Yan, Zewu; Bourret, Edith; Van Helvoort, Antonius; Selbach, Sverre Magnus; Meier, Dennis (Peer reviewed; Journal article, 2021)
      Dislocations are 1D topological defects with emergent electronic properties. Their low dimensionality and unique properties make them excellent candidates for innovative device concepts, ranging from dislocation-based ...