Blar i Institutt for fysikk på forfatter "Van Helvoort, Antonius Theodorus Johann"
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Characterisation of photochromic oxygen-containing yttrium hydride by electron microscopy
Ånes, Håkon Wiik (Master thesis, 2017)Smart windows based on chromogenic materials have in recent years emerged as promising candidates for the next generation of energy-efficient windows. One group of chromogenic materials are photochromic, which are characterised ... -
Characterization of Bioaerosols using Electron Microscopy with Special Emphasis on Airborne Bacteria
Grydeland, Hanne (Master thesis, 2014)Bioterrorist attacks on confined, indoor areas such as underground subway stations by the release of pathogenic microorganisms into air, could pose a threat to public safety. The potential threat may be severe not only due ... -
Chemical Vapour Deposition and Electron Microscopy Analysis of Graphene
Henninen, Trond Rypdal (Master thesis, 2016)Graphene is a promising material for many applications, including electronics, energy technologies, chemical filters and mechanical materials. In this work, graphene has been grown by chemical vapour deposition (CVD) on ... -
Developing Quantitative Image Processing of Scanning Electron Microscopy Data Sets to Evaluate Nanowire Growth
Myklebost, Steinar (Master thesis, 2017)Will be given later -
Electron Microscopy Characterization of III-Nitride Nanowires grown on Graphene
Nylund, Inger-Emma (Master thesis, 2018)GaN nanowires grown on graphene glass using molecular beam epitaxy have been studied using scanning electron microscopy and different transmission electron microscopy techniques. The nanowires have an AlN nucleation particle ... -
Electron Microscopy characterization of the Interface between a (111)-Si Substrate and GaAs Nanowires grown by Self-Catalysis by MBE
Fauske, Vidar Tonaas (Master thesis, 2011)The interface between zincblende (ZB) GaAs nanowires (NWs) grown by selfcatalysisin MBE, and a 111-Si substrate was studied. This was done with thepurpose of determining if any defects, stacking fault, twins, different ... -
Examining the three-dimensional structure of an AlGaAs shell on GaAs nanowires
Mosberg, Aleksander Buseth (Master thesis, 2015)Semiconducting direct-bandgap nanowires (NWs) are a promising material system for future optoelectronic devices. In this work, the effect of shell growth temperature has been examined on the structural and optical properties ... -
Refinement of the ζ-factor Method for Quantitative Energy-Dispersive X-ray Spectroscopy in Scanning Transmission Electron Microscopy
Garmannslund, Andreas (Master thesis, 2016)The ζ-factor method for quantitative energy-dispersive X-ray spectroscopy (EDS) has been implemented using the open source Python-based HyperSpy library. The ζ-factors for Ga, As, Al, C and Sb have been determined ... -
Selective examination of optically and structurally separable parts within GaAs/AlGaAs core-shell nanowires by micro-photoluminescence and transmission electron microscopy
Snustad, Ingrid (Master thesis, 2013)GaAs/AlGaAs core-shell nanowires exhibit properties suitable for electronic and opto-electronic applications. In this work, individual parts of Au and self catalyzed nanowires are examined through microphotoluminescence ... -
Study end surfaces of GaAsSb NW grown on graphene by electron microscopy
Neumann, Johanna (Master thesis, 2018)III-V nanowires (NWs) are attractive for solar cells. Through the composition of the NWs, their bandgap and hence their electronic properties can be tuned, for example, to optimise absorption so that most of the Sun's ... -
TEM characterization of GaAs/GaAsSb heterostructured nanowires for laser applications
Andersen, Ingrid Marie (Master thesis, 2017)The structure of self-catalyzed GaAs NWs (length ~10 µm and thickness ~400 nm) with six GaAsSb/GaAs superlattices (SL), have been analyzed. Four samples with varying Sb flux and GaAsSb well growth time, which all depicted ... -
TEM characterization of high-purity quartz
Busam, Jochen (Master thesis, 2017)The PV industry requires high-purity quartz for the production of crucibles for mono crystalline silicon production. Even the smallest amounts of impurities can degrade the performance of photodiode wafers, therefore a ... -
TEM study of GaAs/GaAsSb core-shell nanowires
Klubicka, Andrea (Master thesis, 2013)Structural and compositional analysis on silicon-grown, Ga-assisted and heterostructured nanowires, consisting of a GaAs core surrounded by a GaAs_{1-y}Sb_{y} shell was conducted. Here, two samples were studied differing ... -
The effects of Be doping on the structure of Ga and Au-assisted GaAs-based heterostructured semiconductor nanowires.: Effekten av Be-doping på strukturen av Ga og Au-assistert GaAs-baserte heterostructured halvledere nanotråder.
Jayakumari, Sethulakshmy (Master thesis, 2013)The crystal structures of Gallium Arsenide (GaAs) based heterostructured semiconductor nanowires (NW) doped by different beryllium (Be) concentration grown by molecular beam epitaxy were characterized with the help of ... -
Transmission Electron Microscopy Characterization of Sintered and Hot-Pressed Silicon Carbide
Bergh, Tina (Master thesis, 2016)Silicon carbide has excellent mechanical properties. Sintered or hot-pressed (HP) SiC is essen- tial for applications that require dense bodies. In this work, the microstructure of one solid state sintered SiC and one ...