• Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy 

      Patra, Saroj Kumar; Tran, Thanh-Nam; Vines, Lasse; Kolevatov, Ilia; Monakhov, Edouard; Fimland, Bjørn-Ove (Journal article, 2017)
      Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al0.9Ga0.1As0.06Sb0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room temperature ...
    • The Role of Boron in Low Copper Spheroidal Graphite Irons 

      Bugten, Andreas Voll; Michels Brito Miranda, Leander Edward; Brurok, Rune Botnmark; Hartung, Cathrine; Ott, Emmanuelle; Vines, Lasse; Li, Yanjun; Arnberg, Lars Erik; Sabatino, Marisa Di (Peer reviewed; Journal article, 2023)
      The effects of boron at concentrations ranging from 5 to 525 ppm in low copper spheroidal graphite iron (SGI) has been studied. At 130 to 140 ppm, no particular effect of boron was observed on the size distributions, number ...