Browsing NTNU Open by Author "Veal, Tim D"

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    • Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2 

      Birkett, Max; Savory, Christopher N; Rajpalke, Mohana; Linhart, Wojciech M; Whittles, Thomas J; Gibbon, James T; Welch, Adam W; Mitrovic, Ivona Z.; Zakutayev, Andriy; Scanlon, David; Veal, Tim D (Journal article; Peer reviewed, 2018)
      The temperature-dependence of the band gap of the proposed photovoltaic absorber copper antimony sulphide (CuSbS2) has been studied by Fourier-transform infrared spectroscopy. The direct gap rises from 1.608 to 1.694 eV ...

    • Computational Prediction and Experimental Realization of Earth-Abundant Transparent Conducting Oxide Ga-Doped ZnSb2O6 

      Jackson, Adam; Parrett, Benjamin; Willis, Joe; Ganose, Alex; Leung, Winnie; Liu, Yuhan; Williamson, Benjamin; Kim, Timur K.; Hoesch, Moritz; Veiga, Larissa; Kalra, Raman; Neu, Jens; Schmuttenmaer, Charles; Lee, Tien-Lin; Regoutz, Anna; Lee, Tung-Chun; Veal, Tim D; Palgrave, Robert; Perry, Robin; Scanlon, David (Peer reviewed; Journal article, 2022)
      Transparent conducting oxides have become ubiquitous in modern optoelectronics. However, the number of oxides that are transparent to visible light and have the metallic-like conductivity necessary for applications is ...

    • Multi-Phase Sputtered TiO<inf>2</inf>-Induced Current–Voltage Distortion in Sb<inf>2</inf>Se<inf>3</inf> Solar Cells 

      Don, Christopher; Shalvey, Thomas; Smiles, Matthew; Thomas, Luke; Phillips, Laurie; Hobson, Theodore; Finch, Harry; Jones, Leanne; Swallow, Jack; Fleck, Nicole; Markwell, Christopher; Thakur, Pardeep; Lee, Tien-Lin; Biswas, Deepnarayan; Bowen, Leon; Williamson, Benjamin Albert Dobson; Scanlon, David O.; Dhanak, Vinod; Durose, Vinod; Veal, Tim D; Major, Jonathan (Peer reviewed; Journal article, 2023)
      Despite the recent success of CdS/Sb2Se3 heterojunction devices, cadmium toxicity, parasitic absorption from the relatively narrow CdS band gap (2.4 eV) and multiple reports of inter-diffusion at the interface forming ...