• ALD Zn(O,S) Thin Films’ Interfacial Chemical and Structural Configuration Probed by XAS 

      Dadlani, Anup; Acharya, Shinjita; Trejo, Orlando; Fritz, Prinz; Torgersen, Jan (Journal article; Peer reviewed, 2016)
      The ability to precisely control interfaces of atomic layer deposited (ALD) zinc oxysulfide (Zn(O,S)) buffer layers to other layers allows precise tuning of solar cell performance. The O K- and S K-edge X-ray absorption ...
    • Relating Electronic and Geometric Structure of Atomic Layer Deposited BaTiO3 to its Electrical Properties 

      Torgersen, Jan; Acharya, Shinjita; Dadlani, Anup; Petousis, Ioannis; Kim, Yongmin; Trejo, Orlando; Nordlund, Dennis; Fritz, Prinz (Journal article; Peer reviewed, 2016)
      Atomic layer deposition allows the fabrication of BaTiO3 (BTO) ultrathin films with tunable dielectric properties, which is a promising material for electronic and optical technology. Industrial applicability necessitates ...
    • The interface of SiO2/ZnS films studied by high resolution X-ray photoluminescence 

      Acharya, Shinjita; Trejo, Orlando; Dadlani, Anup; Torgersen, Jan; Berto, Filippo; Prinz, Fritz (Journal article; Peer reviewed, 2018)
      Sharp interfaces in optoelectronic devices are key for proper band alignment. Despite its benefits as buffer layer, ZnS deposited via atomic layer deposition (ALD) renders intermixed interfaces to its substrate, which can ...