• Aluminum-based contacts for use in GaSb-based diode lasers 

      Tran, Thanh-Nam; Patra, Saroj Kumar; Breivik, Magnus; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2016)
      Aluminum-based contacts could be a good alternative to conventional gold-based contacts for a number of GaSb-based devices. In this study, the use of some Al-based contacts in GaSb-based diode lasers was investigated via ...
    • Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy 

      Patra, Saroj Kumar; Tran, Thanh-Nam; Vines, Lasse; Kolevatov, Ilia; Monakhov, Edouard; Fimland, Bjørn-Ove (Journal article, 2017)
      Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al0.9Ga0.1As0.06Sb0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room temperature ...
    • Fabrication of GaSb-based Y-junction Laser for Gas Spectroscopy 

      Haddeland, Kjetil (Master thesis, 2015)
      Trace gas detection and pollution monitoring are becoming increasingly important for human safety and conservation of the environment. GaSb based semiconductor diode lasers, emitting in the mid-infrared wavelength region ...
    • Plasma-assisted oxide removal from p-type GaSb for low resistivity ohmic contacts 

      Tran, Thanh-Nam; Patra, Saroj Kumar; Breivik, Magnus; Fimland, Bjørn-Ove (Journal article, 2015)
      The effect of several plasma-assisted oxide removal techniques prior to metallization of p-type GaSb was investigated. Compared to conventional chemical methods, the plasma-assisted oxide removal resulted in significant ...