Browsing NTNU Open by Author "Tiwari, Subhadra"
Now showing items 1-17 of 17
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An insight into geometry and orientation of capacitors for high-speed power circuits
Tiwari, Subhadra; Midtgård, Ole-Morten; Undeland, Tore Marvin (Chapter, 2018)SiC transistors can switch extremely fast. Often turn-off di/dt is reduced to limit the turn-off over voltages due to the stray inductances in the commutation loops. Thus, the potential low switching losses are not met. ... -
Characterization of body diodes in the-state-of-the-art SiC FETs-Are they good enough as freewheeling diodes?
Tiwari, Subhadra; Abuishmais, Ibrahim Abed; Langelid, John Kåre; Lund, Richard; Midtgård, Ole-Morten; Undeland, Tore Marvin (Chapter, 2018)This paper investigates the switching phenomenon of body diodes in the state-of-the-art discrete SiC FETs. A comparative performance evaluation of the body diodes in planar and double-trench SiC MOS-FETs, and trench cascode ... -
Comparative evaluation of a commercially available 1.2 kV SiC MOSFET module and a 1.2 kV Si IGBT module
Tiwari, Subhadra; Midtgård, Ole-Morten; Undeland, Tore Marvin (Chapter, 2016)In this paper, a comparative performance evaluation of a 1.2 kV SiC MOSFET module and a 1.2 kV Si IGBT module is carried out under a series of different conditions such as similar dv/dt, di/dt, voltage overshoot, current ... -
Efficiency and Conducted EMI evaluation of a single-phase power factor correction boost converter using state-of-the-art SiC MOSFET and SiC diode
Tiwari, Subhadra; Basu, Supratim; Undeland, Tore Marvin; Midtgård, Ole-Morten (Journal article; Peer reviewed, 2019)SiC-based diodes and MOSFETs switch extremely quickly with low conduction losses. Thus, from the perspective of efficiency, such devices are ideal for a continuous conduction mode (CCM) boost power factor correction (PFC) ... -
Evaluation of Power Losses and Ruggedness of SiC MOSFETs for use in High-Power High-Frequency Induction Heating Generators
Haukelidsæter, Knut (Master thesis, 2018)As the Si IGBTs are confronting its physical limitations when it comes to high-frequency high-power applications, the SiC MOSFET sails up as a promising substitute due to its material properties. However, in the process ... -
Evaluation of Switching Characteristics, Switching Losses and Snubber Design for a Full SiC Half-Bridge Power Module
Torsæter, Bendik Nybakk (Master thesis, 2016)In this thesis, the performance of the full Silicon Carbide (SiC) half-bridge power module BSM120D12P2C005 from Rohm Semiconductor is investigated. A laboratory circuit enabling double-pulse tests of the half-bridge module ... -
Experimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applications
Tiwari, Subhadra; Midtgård, Ole-Morten; Undeland, Tore Marvin; Lund, Richard (Chapter, 2016)—In this paper, the switching performance of asix-pack SiC MOSFET module (CCS050M12CM2) is inves-tigated experimentally using a standard double pulse testmethod. The upper three and the lower three MOSFETsof the ... -
Experimental performance evaluation of two commercially available, 1.2 kV half-bridge SiC MOSFET modules
Tiwari, Subhadra; Midtgård, Ole-Morten; Undeland, Tore Marvin (Chapter; Peer reviewed, 2016)In this paper, the switching performances of two state-of-the-art half-bridge SiC MOSFET modules are evaluated using a standard double pulse test methodology. The selected modules are commercially available, and have the ... -
Hard and soft switching losses of a SiC MOSFET module under realistic topology and loading conditions
Tiwari, Subhadra; Langelid, John Kåre; Midtgård, Ole-Morten; Undeland, Tore Marvin (Chapter, 2017)This paper investigates the switching performance of a 1.2 kV half-bridge SiC MOSFET module from Sanrex. Unlike in a standard SiC MOSFET module, where the MOSFET and the anti-parallel diode chips are fabricated separately, ... -
Merits of SiC MOSFETs for high-frequency soft-switched converters,measurement verifications by both electrial and calorimetric methods
Tiwari, Subhadra; Langelid, John K.; Undeland, Tore Marvin; Midtgård, Ole-Morten (Journal article; Peer reviewed, 2019)This paper quantifies the soft switching loss of a 1.2 kV SiC MOSFET module via a calorimetric method in a 78 kW full-bridge resonant inverter switched at approximately 200 kHz. By switching the SiC MOSFET just before the ... -
Parasitic capacitances and inductances hindering utilization of the fast switching potential of SiC power modules. Simulation model verified by experiment
Tiwari, Subhadra; Midtgård, Ole-Morten; Undeland, Tore Marvin; Lund, Richard (Chapter, 2017)This paper investigates the switching performances of two state-of-the-art half-bridge SiC MOSFET modules using a standard double pulse test methodology. A deliberate choice of the modules with the same voltage and current ... -
SiC MOSFETs an Diodes: Characterization, Applications and Low-Inductive Converter Design Considerations
Tiwari, Subhadra (Doctoral theses at NTNU;2019:238, Doctoral thesis, 2019)The future power electronic system trends are: higher efficiency, higher power density, higher operating temperature and lower operation cost of power electronic converters. The emerging wide-bandgap (WBG) semiconductor ... -
SiC MOSFETs for future motor drive applications
Tiwari, Subhadra; Midtgård, Ole-Morten; Undeland, Tore Marvin (Chapter, 2016)This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for motor drive applications. Both the modules have same packaging and voltage rating (1.2 kV). The three bridge legs of the ... -
SiC MOSFETs for Offshore Wind Applications
Tiwari, Subhadra; Undeland, Tore Marvin; Midtgård, Ole-Morten; Nilsen, Roy (Journal article; Peer reviewed, 2018)Space and weight are critical factors for offshore wind applications during the construction, operation, and maintenance phases. Superior material properties of silicon carbide enable the development of power devices capable ... -
SiC-based power electronics for subsea remote operated vehicles in the petroleum industry
Baraa, Ask Storjord (Master thesis, 2019)SiC Schottky-barriere dioder had bedre transiente karakteristikker sammenlignet med Si p-n didoer, når vi ser på transiente tap og termiske karakteristikker. Forskjellen i transiente brytningstap ble undersøkt eksperimentelt, ... -
Silicon Carbide Technology for Grid Integrated Photovoltaic Applications: Dynamic Characterization of Silicon Carbide Transistors.
Tiwari, Subhadra (Master thesis, 2011)For the endorsement of the study of potential utilization of the emerging silicon carbide (SiC) devices, three SiC active switches, namely SJEP120R063 (1200V, 63 mohm) SiC JFET manufactured by Semisouth, BT1206AC-P1 (1200V, ... -
Soft switching loss measurements of a 1.2 kV SiC MOSFET module by both electrical and calorimetric methods for high frequency applications
Tiwari, Subhadra; Langelid, John Kåre; Midtgård, Ole-Morten; Undeland, Tore Marvin (Chapter, 2017)This paper investigates the soft switching performance of a 1.2 kV half-bridge SiC MOSFET module, FCA150XB120 from Sanrex. The selected module has both MOSFET and diode integrated on a single chip. A single pulse control ...