• Mechanisms of oxygen vacancy aggregation in SiO 2 and HfO 2 

      Gao, David Zhe; Strand, Jack; Munde, Manveer S; Shluger, Alexander L (Journal article; Peer reviewed, 2019)
      Dielectric oxide films in electronic devices undergo significant structural changes during device operation under bias. These changes are usually attributed to aggregation of oxygen vacancies resulting in formation of ...