• Low-Temperature Growth of Graphene on a Semiconductor 

      Røst, Håkon Ivarssønn; Chellappan, Rajesh Kumar; Strand, Frode Sneve; Grubišić-Čabo, Antonija; Reed, Benjamen P.; Prieto, Mauricio J.; Tǎnase, Liviu C.; Caldas, Lucas de Souza; Wongpinij, Thipusa; Euaruksakul, Chanan; Schmidt, Thomas; Tadich, Anton; Cowie, Bruce; Li, Zheshen; Cooil, Simon; Wells, Justin (Peer reviewed; Journal article, 2021)
      The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate ...
    • Probing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform 

      Røst, Håkon; Tosi, Ezequiel; Strand, Frode Sneve; Åsland, Anna Cecilie; Lacovig, Paolo; Lizzit, Silvano; Wells, Justin William (Peer reviewed; Journal article, 2023)
      High-density structures of subsurface phosphorus dopants in silicon continue to garner interest as a silicon-based quantum computer platform; however, a much-needed confirmation of their dopant arrangement has been lacking. ...
    • Probing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform 

      Røst, Håkon; Tosi, Ezequiel; Strand, Frode Sneve; Åsland, Anna Cecilie; Lacovig, Paolo; Lizzit, Silvano; Wells, Justin William (Peer reviewed; Journal article, 2023)
      High-density structures of subsurface phosphorus dopants in silicon continue to garner interest as a silicon-based quantum computer platform; however, a much-needed confirmation of their dopant arrangement has been lacking. ...
    • A Simplified Method for Patterning Graphene on Dielectric Layers 

      Røst, Håkon Ivarssønn; Reed, Benjamen P.; Strand, Frode Sneve; Durk, Joseph A.; Evans, D. Andrew; Grubišić-Čabo, Antonija; Wan, Gary; Cattelan, Mattia; Prieto, Mauricio J.; Gottlob, Daniel M.; Tǎnase, Liviu C.; De Souza Caldas, Lucas; Schmidt, Thomas; Tadich, Anton; Cowie, Bruce C. C.; Chellappan, Rajesh Kumar; Wells, Justin William; Cooil, Simon P. (Peer reviewed; Journal article, 2021)
      The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the ...
    • Study of FeSi Interlayers Formed During Iron-Mediated Epitaxial Growth of Graphene on SiC Substrates 

      Strand, Frode Sneve (Master thesis, 2016)
      A proposed graphene integrated semiconductor radiation sensor takes advantage of the electric field effect in graphene by measuring the change in resistance as a function of radiation exposure to the semiconductor substrate. ...