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Blar i NTNU Open på forfatter "Stokkan, Gaute"

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Viser treff 1-11 av 11

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    • Behaviour of the slip-cast crucible as a contamination source during silicon directional solidification 

      Skarstad, Hanna Vaksvik (Master thesis, 2016)
      In this work the behaviour of the slip-cast crucible as a contamination source of multicrystalline silicon during directional solidification (DS) was investigated. Transport parameters of iron were estimated in two types ...
    • Defect-impurity interactions in high performance multicrystalline silicon 

      Adamczyk, Krzysztof (Doctoral theses at NTNU;2018:339, Doctoral thesis, 2018)
      Defect-impurity interactions in high performance multicrystalline silicon The global average and combined land and ocean surface temperature is steadily rising for the last several decades. About 97% of climate scientists ...
    • The effect of preliminary heat treatment on the durability of reaction bonded silicon nitride crucibles for solar cells applications 

      Hendawi, Rania Tayseer Atieh; Ciftja, Arjan; Stokkan, Gaute; Arnberg, Lars; Di Sabatino Lundberg, Marisa (Peer reviewed; Journal article, 2020)
      Silicon nitride crucibles have the potential to replace silica crucibles and reduce the cost of silicon crystallization because of their reusability potential. Till date, crucibles’ heat treatment before each use is a ...
    • Formation of Dislocation Arrays from CSL-type Grain Boundaries in Solar Silicon 

      Dyrvik, Emil Grove (Master thesis, 2019)
      Fotovoltaisk solenergi er allerede en av de store fornybare energikildene og forventes å være en av de viktigste energiteknologiene i en bærekraftig fremtid. Solceller basert på multikrystallinsk silisium har vært en ...
    • Grain boundary effect on lifetime in high performance multicrystalline silicon during solar cell processing 

      Adamczyk, Krzysztof; Søndenå, Rune; M'hamdi, Mohammed; Autruffe, Antoine; Stokkan, Gaute; Di Sabatino, Marisa (Journal article; Peer reviewed, 2016)
      High performance multicrystalline silicon wafers used in solar cell processing have been investigated with focus on quantification of the grain boundary effect on lifetime. The lifetime of a set of 16 wafers from different ...
    • Guidelines for establishing an etching procedure for dislocation density measurements on multicrystalline silicon samples 

      Adamczyk, Krzysztof Jan; Stokkan, Gaute; Di Sabatino Lundberg, Marisa (Journal article; Peer reviewed, 2018)
      With multicrystalline silicon becoming the main material used for photovoltaic applications and dislocations being one of the main material limitations to better solar cell efficiency, etch pit density measurements are ...
    • High performance multicrystalline silicon: Grain structure and iron precipitation 

      Autruffe, Antoine; M'hamdi, Mohammed; Schindler, Florian; Heinz, Friedemann D.; Ekstrøm, Kai Erik; Schubert, Martin C.; Di Sabatino Lundberg, Marisa; Stokkan, Gaute (Journal article; Peer reviewed, 2017)
      We report results from a national project about impurities in high performance multicrystalline silicon: Contamination sources, transport routes, interaction with crystal defects and impact on solar cell efficiency parameters. ...
    • Impurity control in high performance multicrystalline silicon 

      Stokkan, Gaute; Di Sabatino Lundberg, Marisa; Søndenå, Rune; Juel, Mari; Autruffe, Antoine; Adamczyk, Krzysztof; Skarstad, Hanna Vaksvik; Ekstrøm, Kai Erik; Wiig, Marie Syre; You, Chang Chuan; Haug, Halvard; M'hamdi, Mohammed (Journal article; Peer reviewed, 2017)
      We report results from a national project about impurities in high performance multicrystalline silicon: Contamination sources, transport routes, interaction with crystal defects and impact on solar cell efficiency parameters. ...
    • Random angle grain boundary formation and evolution dynamics during Si directional solidification 

      Tsoutsouva, Maria; Stokkan, Gaute; Regula, Gabrielle; Ryningen, Birgit; Riberi-Béridot, Thècle; Reinhart, Guillaume; Mangelinck-Noël, Nathalie (Journal article; Peer reviewed, 2019)
      The growth of multicrystalline silicon and the formation of a random angle grain boundary, as well as the dislocation generation and expansion is observed dynamically in situ, by Synchrotron X-ray imaging techniques. The ...
    • Recombination activity of grain boundaries in high-performance multicrystalline Si during solar cell processing 

      Krzysztof, Adamczyk; Søndenå, Rune; Stokkan, Gaute; Looney, Erin; Jensen, Mallory; Lai, Barry; Rinio, Markus; Sabatino, Marisa Di (Journal article; Peer reviewed, 2018)
      In this work, we applied internal quantum efficiency mapping to study the recombination activity of grain boundaries in High Performance Multicrystalline Silicon under different processing conditions. Wafers were divided ...
    • Structure Control of Multicrystalline Silicon 

      Ekstrøm, Kai Erik (Doctoral thesis at NTNU;2016:65, Doctoral thesis, 2016)
      This work targets multiple approaches for controlling the initial growth conditions of directional solidification, and their effect on the final material microstructure and performance. Challenges related to both seeded ...

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