Browsing NTNU Open by Author "Spro, Ole Christian"
Now showing items 1-12 of 12
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A 1 kW PFC converter with GaN-transistors and planar magnetics
Engetrøen, Ådne Finnes (Master thesis, 2019)Auka krafttettleik, kostnadsreduksjon, auka effektivitet og auka driftssikkerheit er fire av dei viktigaste målsetjingane i halvleiarindustrien i dag. Ved bruk av GaN-halvleiarar er fleire av desse målsetjingane innan ... -
Challenges of SiC MOSFET Power Cycling Methodology
Göthner, Fredrik T. B. W.; Spro, Ole Christian; Hernes, Magnar; Peftitsis, Dimosthenis (Chapter, 2018)This paper investigates the power cycling methodology for reliability testing of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). Dedicated test benches were designed and built to study this issue. The ... -
Comparison between Si MOSFETs and GaN HEMTs with special emphasis on low load problems occuring in the LLC resonant converter
Blingsmo, Lyder Rumohr (Master thesis, 2019)Det stilles store krav til likerettere brukt til å forsyne datasentere med kraft. Et av kravene er høy virkningsgrad. En av de vanligste topologiene brukt til dette formålet består av en PFC-likeretter, for å få sinusformet ... -
Driver stage implementation with improved turn-on and turn-off delay for wide band gap devices
Spro, Ole Christian; Guidi, Giuseppe; Ljøkelsøy, Kjell; Hernes, Magnar; Midtgård, Ole-Morten; Undeland, Tore Marvin (Chapter, 2018)This paper presents a driver topology intended for WBG devices with the goal of improving the switching performance. In particular, the initial delay time of the switching transient was targeted. In high power and high ... -
Driving of a GaN enhancement mode HEMT transistor with zener diode protection for high efficiency and low EMI
Spro, Ole Christian; Basu, Supratim; Abuishmais, Ibrahim Abed; Midtgård, Ole-Morten; Undeland, Tore Marvin (Chapter, 2017)The ultra-low gate charge characteristics and low gate voltage limitation of a GaN enhancement mode HEMT in combination with stray circuit elements poses many challenges of driving them in power electronic applications. ... -
High voltage insulation design of coreless, planar PCB transformers for multi-MHz power supplies
Spro, Ole Christian; Mauseth, Frank; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2021)This paper investigates the insulation design for printed, planar, coreless, and high-frequency transformers with high isolation-voltage. By using finite element analysis on 2D axial-symmetry, the transformer circuit ... -
High-voltage and high-frequency design of planar transformer with minimum coupling capacitance
Spro, Ole Christian; Peftitsis, Dimosthenis; Lefranc, Pierre (Chapter, 2019)This paper investigates the design of a planar transformer operating at 6.78 MHz and with a target maximum isolation voltage of 40 kV using 2D FEM simulations as a tool. In addition, minimal coupling capacitance must be ... -
Improved SiC MOSFET SPICE model to avoid convergence errors
Hove, Håvard Lefdal; Spro, Ole Christian; Guidi, Giuseppe; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2020)This paper presents improvements to a SPICE model for a commercially available SiC MOSFET to avoid convergence errors while still providing reliable simulation results. Functionality in the internal part of the model that ... -
Minimization of dead time effect on bridge converter output voltage quality by use of advanced gate drivers
Hove, Håvard Lefdal; Spro, Ole Christian; Peftitsis, Dimosthenis; Guidi, Giuseppe; Ljøkelsøy, Kjell (Chapter, 2019)This paper presents a voltage-controlled multistage gate driver topology for delay time minimization that improves the converter output voltage quality while supplying a motor load. Three gate driver topologies for SiC ... -
Modeling of SiC MOSFETs and Parameter Fitting Using a Genetic Algorithm
Kongerød, Sindre Bjørbekk (Master thesis, 2020)Denne masteroppgaven demonstrerer bruken av en genetisk algoritme til å optimalisere parametere i simuleringsmodeller for å nøyaktig representere målte statiske egenskaper til en SiC MOSFET ved romtemperatur. Ulike SiC ... -
Modelling and quantification of power losses due to dynamic on-state resistance of GaN E-mode HEMT
Spro, Ole Christian; Peftitsis, Dimosthenis; Midtgård, Ole-Morten; Undeland, Tore Marvin (Chapter, 2017)This paper investigates a method for quantifying the additional losses in high-voltage GaN enhancement mode HEMTs (eHEMT) employed in converter applications. The additional losses stem from the phenomenon known as current ... -
Optimized Design of Multi-MHz Frequency Isolated Auxiliary Power Supply for Gate Drivers in Medium-Voltage Converters
Spro, Ole Christian; Lefranc, Pierre; Par, Sanghyeon; Rivas-Davila, Juan; Peftitsis, Dimosthenis; Midtgård, Ole-Morten; Undeland, Tore Marvin (Peer reviewed; Journal article, 2020)This article presents the design and optimization of a suitable topology for an isolated dc–dc auxiliary power supply with high isolation voltage and low coupling capacitance. The converter consists of a GaN HEMT inverter ...