• Defect-Enhanced Polarization Switching in the Improper Ferroelectric LuFeO3 

      Barrozo, Petrucio; Småbråten, Didrik Rene; Tang, Yun-Long; Prasad, Bhagwati; Saremi, Sahar; Ozgur, Rustem; Thakare, Vishal; Steinhardt, Rachel A.; Holtz, Megan, E.; Stoica, Vladimir Alexandru; Martin, Lane W.; Schlom, Darrel G.; Selbach, Sverre Magnus; Ramesh, Ramamoorthy (Peer reviewed; Journal article, 2020)
      Results of switching behavior of the improper ferroelectric LuFeO3 are presented. Using a model set of films prepared under controlled chemical and growth‐rate conditions, it is shown that defects can reduce the quasi‐static ...
    • Functional electronic inversion layers at ferroelectric domain walls 

      Mundy, Julia; Schaab, Jakob; Kumagai, Yu; Cano, Andres; Stengel, Massimiliano; Krug, Ingo P.; Gottlob, Daniel G.; Doganay, Hattice; Holtz, Megan, E.; Held, Rainer; Yan, Zewu; Bourret, Edith; Schneider, Claus M.; Schlom, Darrel G.; Muller, David A.; Ramesh, Ramamoorthy; Spaldin, Nicola A.; Meier, Dennis Gerhard (Journal article; Peer reviewed, 2017)
      Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes ...