Browsing NTNU Open by Author "Schaab, Jakob"

Now showing items 1-8 of 8

    • Application of a long short-term memory for deconvoluting conductance contributions at charged ferroelectric domain walls 

      Holstad, Theodor Secanell; Ræder, Trygve Magnus; Evans, Donald; Småbråten, Didrik Rene; Krohns, Stephan; Schaab, Jakob; Yan, Zewu; Bourret, Edith; Helvoort, Antonius T. J. van; Grande, Tor; Selbach, Sverre Magnus; Agar, Joshua; Meier, Dennis Gerhard (Peer reviewed; Journal article, 2020)
      Ferroelectric domain walls are promising quasi-2D structures that can be leveraged for miniaturization of electronics components and new mechanisms to control electronic signals at the nanoscale. Despite the significant ...

    • Electrical half-wave rectification at ferroelectric domain walls 

      Schaab, Jakob; Skjærvø, Sandra Helen; Krohns, Stephan; Dai, Xiaoyu; Holtz, Megan, E.; Cano, Andrés; Lilienblum, Martin; Yan, Zewu; Bourret, Edith; Muller, David A.; Fiebig, Manfred; Selbach, Sverre Magnus; Meier, Dennis (Journal article; Peer reviewed, 2018)
      Domain walls in ferroelectric semiconductors show promise as multifunctional two-dimensional elements for next-generation nanotechnology. Electric fields, for example, can control the direct-current resistance and reversibly ...

    • Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO3 

      Holstad, Theodor S.; Evans, Donald; Ruff, Alexander; Småbråten, Didrik Rene; Schaab, Jakob; Tzschaschel, Christian; Yan, Zewu; Bourret, Edith; Selbach, Sverre Magnus; Krohns, Stephan; Meier, Dennis (Journal article; Peer reviewed, 2018)
      Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, ...

    • Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy 

      Schaab, Jakob; Shapovalov, Konstantin; Schoenherr, Peggy; Hackl, Johanna; Khan, Muhammad Imtiaz; Hentschel, Mario; Yan, Zewu; Bourret, Edith; Schneider, Claus M.; Nemsak, Slavomír; Stengel, Massimiliano; Cano, Andrés; Meier, Dennis (Journal article; Peer reviewed, 2019)
      Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining X-PEEM with scanning probe microscopy and ...

    • Frequency dependent polarisation switching in h-ErMnO3 

      Ruff, Alexander; Li, Ziyu; Loidl, Alois; Schaab, Jakob; Fiebig, Manfred; Cano, Andres; Yan, Zewu; Bourret, Edith; Glaum, Julia; Meier, Dennis; Krohns, Stephan (Journal article; Peer reviewed, 2018)
      We report an electric-field poling study of the geometric-driven improper ferroelectric h-ErMnO3. From a detailed dielectric analysis we deduce the temperature and frequency dependent range for which single-crystalline ...

    • Functional electronic inversion layers at ferroelectric domain walls 

      Mundy, Julia; Schaab, Jakob; Kumagai, Yu; Cano, Andres; Stengel, Massimiliano; Krug, Ingo P.; Gottlob, Daniel G.; Doganay, Hattice; Holtz, Megan, E.; Held, Rainer; Yan, Zewu; Bourret, Edith; Schneider, Claus M.; Schlom, Darrel G.; Muller, David A.; Ramesh, Ramamoorthy; Spaldin, Nicola A.; Meier, Dennis Gerhard (Journal article; Peer reviewed, 2017)
      Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes ...

    • Intrinsic and extrinsic conduction contributions at nominally neutral domain walls in hexagonal manganites 

      Schultheiß, Jan; Schaab, Jakob; Småbråten, Didrik Rene; Skjærvø, Sandra Helen; Bourret, Edith; Yan, Zewu; Selbach, Sverre Magnus; Meier, Dennis Gerhard (Peer reviewed; Journal article, 2020)
      Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of ...

    • Observation of uncompensated bound charges at improper ferroelectric domain walls 

      Schoenherr, Peggy; Shapovalov, Konstantin; Schaab, Jakob; Yan, Zewu; Bourret, Edith; Hentschel, Mario; Stengel, Massimiliano; Fiebig, Manfred; Cano, Andrés; Meier, Dennis (Journal article; Peer reviewed, 2019)
      Low-temperature electrostatic force microscopy (EFM) is used to probe unconventional domain walls in the improper ferroelectric semiconductor Er0.99Ca0.01MnO3 down to cryogenic temperatures. The low-temperature EFM maps ...