• Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide 

      Zhu, Zhen; Sippola, Perttu; Ylivaara, Oili M E; Modanese, Chiara; Di Sabatino Lundberg, Marisa; Mizohata, Kenichiro; Merdes, Saoussen; Lipsanen, Harri; Savin, Hele (Peer reviewed; Journal article, 2019)
      In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 ...
    • Nanometer‐Scale Depth‐Resolved Atomic Layer Deposited SiO2 Thin Films Analyzed by Glow Discharge Optical Emission Spectroscopy 

      Zhu, Zhen; Modanese, Chiara; Sippola, Perttu; Di Sabatino Lundberg, Marisa; Savin, Hele (Journal article; Peer reviewed, 2018)
      In this contribution, pulsed radio frequency (rf) glow discharge optical emission spectroscopy (GDOES) is used to investigate the film properties of SiO2 deposited by plasma enhanced atomic layer deposition (PEALD), for ...
    • Surface passivation properties of HfO2 thin film on n-Type crystalline Si 

      Cheng, Xuemei; Repo, Paivikki; Haug, Halvard; Perros, Alexander Pyymaki; Marstein, Erik Stensrud; Di Sabatino Lundberg, Marisa; Savin, Hele (Journal article, 2017)
      Atomic layer deposited hafnium oxide is shown to provide good surface passivation of low resistivity, n-type crystalline Si wafers after a low temperature anneal. The surface passivation is related to a fixed negative ...