Blar i NTNU Open på forfatter "Rajpalke, Mohana"

Viser treff 1-4 av 4

    • Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2 

      Birkett, Max; Savory, Christopher N; Rajpalke, Mohana; Linhart, Wojciech M; Whittles, Thomas J; Gibbon, James T; Welch, Adam W; Mitrovic, Ivona Z.; Zakutayev, Andriy; Scanlon, David; Veal, Tim D (Journal article; Peer reviewed, 2018)
      The temperature-dependence of the band gap of the proposed photovoltaic absorber copper antimony sulphide (CuSbS2) has been studied by Fourier-transform infrared spectroscopy. The direct gap rises from 1.608 to 1.694 eV ...

    • Detecting minute amounts of nitrogen in GaNAs thin films using STEM and CBED 

      Vatanparast, Maryam; Shao, Yu-Tsun; Rajpalke, Mohana; Fimland, Bjørn-Ove; Reenaas, Turid Dory; Holmestad, Randi; Vullum, Per Erik; Zuo, Jian Min (Journal article; Peer reviewed, 2021)
      Nitrogen (N) is a common element added to GaAs for band gap engineering and strain compensation. However, detection of small amounts of N is difficult for electron microscopy as well as for other chemical analysis techniques. ...

    • The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene 

      Liudi Mulyo, Andreas; Rajpalke, Mohana; Vullum, Per Erik; Weman, Helge; Kishino, Katsumi; Fimland, Bjørn-Ove (Peer reviewed; Journal article, 2020)
      GaN nanocolumns were synthesized on single-layer graphene via radio-frequency plasma-assisted molecular beam epitaxy, using a thin migration-enhanced epitaxy (MEE) AlN buffer layer as nucleation sites. Due to the weak ...

    • Processing Techniques for Dilute Nitride Gallium Arsenide Intermediate-Band Solar Cell Structures 

      Hallum, Goran Erik (Master thesis, 2016)
      A solar cell processing procedure is calibrated for dilute nitride GaAs intermediate band solar cell structures, and applied to a reference GaAs cell. The processing consists of front and backside contact metalization, a ...