• Approaching the Limits of Aspect Ratio in Free-Standing Al2O3 3D Shell Structures 

      Burgmann, Stephanie; Lid, Markus Joakim; Chaikasetsin, Settasit; Bjørdal, Dag Skjerven; Prinz, Fritz; Provine, John; Berto, Filippo; Van Helvoort, Antonius; Torgersen, Jan (Peer reviewed; Journal article, 2022)
      Nanoscale free-standing membranes are used for a variety of sensors and other micro/nano-electro-mechanical systems devices. To tune performance, it is indispensable to understand the limits of aspect ratios achievable. ...
    • Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors 

      Provine, J; Schindler, Peter; Torgersen, Jan; Hyo Jin, Kim; Karnthaler, Hans-Peter; Prinz, Fritz (Journal article; Peer reviewed, 2016)
      Tetrakisdimethylamido (TDMA) based precursors are commonly used to deposit metal oxides such as TiO2, ZrO2, and HfO2 by means of chemical vapor deposition and atomic layer deposition (ALD). Both thermal and plasma enhanced ...
    • Extending the limits of Pt/C catalysts with passivation-gas-incorporated atomic layer deposition 

      Xu, Shicheng; Kim, Yongmin; Park, Joonsuk; Higgins, Drew; Shen, Shih-Jia; Thian, Dickson; Provine, John; Torgersen, Jan; Graf, Tanja; Schladt, Thomas; Orazov, Marat; Liu, Bernard Haochih; Prinz, Fritz (Journal article; Peer reviewed, 2018)
      Controlling the morphology of noble metal nanoparticles during surface depositions is strongly influenced by precursor–substrate and precursor–deposit interactions. Depositions can be improved through a variety of means, ...
    • Finish-pass strategy to improve sidewall angle and processing time in FIB milled structures 

      Lid, Markus Joakim; Bin Afif, Abdulla; Torgersen, Jan; Prinz, Fritz (Peer reviewed; Journal article, 2021)
      Focused Ion Beams (FIB) systems are employed for their ability to manipulate and remove material on the nanoscale for creating complex structures. By splitting the milling job into multiple sub-patterns, consisting of a ...
    • The interface of SiO2/ZnS films studied by high resolution X-ray photoluminescence 

      Acharya, Shinjita; Trejo, Orlando; Dadlani, Anup; Torgersen, Jan; Berto, Filippo; Prinz, Fritz (Journal article; Peer reviewed, 2018)
      Sharp interfaces in optoelectronic devices are key for proper band alignment. Despite its benefits as buffer layer, ZnS deposited via atomic layer deposition (ALD) renders intermixed interfaces to its substrate, which can ...