• Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors 

      Provine, J; Schindler, Peter; Torgersen, Jan; Hyo Jin, Kim; Karnthaler, Hans-Peter; Prinz, Fritz (Journal article; Peer reviewed, 2016)
      Tetrakisdimethylamido (TDMA) based precursors are commonly used to deposit metal oxides such as TiO2, ZrO2, and HfO2 by means of chemical vapor deposition and atomic layer deposition (ALD). Both thermal and plasma enhanced ...
    • Extending the limits of Pt/C catalysts with passivation-gas-incorporated atomic layer deposition 

      Xu, Shicheng; Kim, Yongmin; Park, Joonsuk; Higgins, Drew; Shen, Shih-Jia; Thian, Dickson; Provine, John; Torgersen, Jan; Graf, Tanja; Schladt, Thomas; Orazov, Marat; Liu, Bernard Haochih; Prinz, Fritz (Journal article; Peer reviewed, 2018)
      Controlling the morphology of noble metal nanoparticles during surface depositions is strongly influenced by precursor–substrate and precursor–deposit interactions. Depositions can be improved through a variety of means, ...
    • The interface of SiO2/ZnS films studied by high resolution X-ray photoluminescence 

      Acharya, Shinjita; Trejo, Orlando; Dadlani, Anup; Torgersen, Jan; Berto, Filippo; Prinz, Fritz (Journal article; Peer reviewed, 2018)
      Sharp interfaces in optoelectronic devices are key for proper band alignment. Despite its benefits as buffer layer, ZnS deposited via atomic layer deposition (ALD) renders intermixed interfaces to its substrate, which can ...