Browsing NTNU Open by Author "Philipps, Daniel Alexander"
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Capacitance Variations and Gate Voltage Hysteresis Effects on the Turn-On Switching Transients Modelling of High-Voltage SiC MOSFETs
Rødal, Gard Lyng; Vivekanandham Pushpalatha, Yoganandam; Philipps, Daniel Alexander; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2023) -
A Flexible Test Setup for Long-Term Dynamic Characterization of SiC MOSFETs under Soft- and Hard-Switching Conditions
Philipps, Daniel Alexander; Peftitsis, Dimosthenis (Chapter, 2021)Due to the superior material characteristics of Silicon Carbide (SiC), the use of SiC MOSFETs enables higher system power density or efficiency depending on the design perspective. To identify the improvement potential in ... -
Four Level Voltage Active Gate Driver for Loss and Slope Control in SiC MOSFETs
Bratvold Ekren, Halvor; Philipps, Daniel Alexander; Rødal, Gard Lyng; Peftitsis, Dimosthenis (Journal article, 2022)Silicon Carbide power semiconductors exhibit fast dynamic behavior. This facilitates the design of high efficiency and high power density converters. However, the resulting current and voltage changing rates demand extensive ... -
A Hybrid Current- and Voltage-Source Driver for Active Driving of Series-Connected SiC MOSFETs
Ubostad, Tobias Nieckula; Philipps, Daniel Alexander; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2024)The series-connection of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors ( mosfet s) is an attractive way of increasing the blocking voltage capability of a switch. However, due to inherent transient ... -
A Hybrid Current- and Voltage-Source Driver for Active Driving of Series-Connected SiC MOSFETs
Ubostad, Tobias Nieckula; Philipps, Daniel Alexander; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2024)The series-connection of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors ( mosfet s) is an attractive way of increasing the blocking voltage capability of a switch. However, due to inherent transient ... -
Investigation of a Four Level Voltage Active Gate Driver for Loss and Slope Control of SiC MOSFETs
Ekren. Halvor Bratvold (Master thesis, 2022)denne masteroppgaven blir en styrekrets for silikon karbid metall-oksid-halvleder felteffekttransistorer (SiC MOSFET) introdusert. Denne styrekretsen introduserer midlertidige spenningsnivå som kan styres både i lengde og ... -
Low Inductive Characterization of Fast-Switching SiC MOSFETs and Active Gate Driver Units
Philipps, Daniel Alexander; Xue, Peng; Ubostad, Tobias Nieckula; Iannuzzo, Francesco; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2023)Accurate switching device characterization is necessary for effectively utilizing the technological advantages of Silicon Carbide (SiC) Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) over their Silicon ... -
Low Inductive Platform for Long- and Short-term Dynamic Charaterization of SiC MOSFETs
Philipps, Daniel Alexander; Ubostad, Tobias; Peftitsis, Dimosthenis (Chapter, 2022)State-of-the art Silicon Carbide Power MOS-FETs switch at unprecedented speed. Therefore, special attention must be paid to the circuit design of dynamic characterization setups. Only if parasitic layout inductances are ... -
On Dynamic Characterization Evaluation and Control of Active Gate Drivers for SiC power MOSFETs
Philipps, Daniel Alexander (Doctoral theses at NTNU;2023:388, Doctoral thesis, 2023)Silicon Carbide (SiC) powerMetal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) bear the potential of revolutionizing power electronic converters in regard to high efficiency, but also high power density converters ... -
Real-Time Discrete Electro-Thermal Model of Dual Active Bridge Converter for Photovoltaic Systems
Vivekanandham Pushpalatha, Yoganandam; Philipps, Daniel Alexander; Baumann, Timm Felix; Peftitsis, Dimosthenis (Journal article; Peer reviewed, 2024)Renewable energy systems have stochastic generation profiles, which affect the performance of the power electronic converters in these systems, especially due to the excessive thermal cycling. In particular, the power ... -
Smart Universal Parameter Fitting Method for Modeling Static SiC Power MOSFET Behavior
Philipps, Daniel Alexander; Peftitsis, Dimosthenis (Chapter, 2021)For efficient converter design, modeling of switching components must be both accurate and fast. A variety of simulation models for SiC Power MOSFETs has been developed. To achieve adequate accuracy, models are adjusted ... -
Temperature Dependency and Active Gate Driver enabled Active Temperature Control of SiC Power MOSFETs
Nerby, Mathias Fjeldberg (Master thesis, 2023)SiC effekt MOSFETer er sårbar mot termiske effekter, noe som kan påvirke påliteligheten deres på grunn av termomekanisk stress ved laggrensesnittene. For å dempe dette kan metoder for å redusere temperatursvingninger i ... -
Wireless Control of Active Gate Drivers for Silicon Carbide power MOSFETs
Philipps, Daniel Alexander; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2023)Active Gate Drivers (AGDs) enhance controllability and monitoring of switching devices, especially for fast switching Silicon Carbide (SiC) power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). To support ...