• AlGaN Nanowires Grown on SiO2/Si (100) Using Graphene as a Buffer Layer 

      Wang, Yunyu; Dheeraj, Dasa; Liu, Zhiqiang; Liang, Meng; Li, Yang; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Weman, Helge (Peer reviewed; Journal article, 2019)
      III-Nitride epitaxy is deeply dependent on the substrate and is difficult to grow on amorphous substrates because of the lattice mismatch limits. In this paper, graphene is employed as a buffer layer to assist AlGaN nanowire ...
    • Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si 

      Ren, Fang; Yin, Yue; Wang, Yunyu; Liu, Zhiqiang; Meng, LIang; Ou, Haiyan; Ao, Jinping; Wei, Tongbo; Yan, Jiancheng; Yuan, Guodong; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Dheeraj, Dasa; Weman, Helge (Journal article; Peer reviewed, 2018)
      High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In ...