• Application of a long short-term memory for deconvoluting conductance contributions at charged ferroelectric domain walls 

      Holstad, Theodor Secanell; Ræder, Trygve Magnus; Evans, Donald; Småbråten, Didrik Rene; Krohns, Stephan; Schaab, Jakob; Yan, Zewu; Bourret, Edith; Helvoort, Antonius T. J. van; Grande, Tor; Selbach, Sverre Magnus; Agar, Joshua; Meier, Dennis Gerhard (Peer reviewed; Journal article, 2020)
      Ferroelectric domain walls are promising quasi-2D structures that can be leveraged for miniaturization of electronics components and new mechanisms to control electronic signals at the nanoscale. Despite the significant ...
    • Electrical half-wave rectification at ferroelectric domain walls 

      Schaab, Jakob; Skjærvø, Sandra Helen; Krohns, Stephan; Dai, Xiaoyu; Holtz, Megan, E.; Cano, Andrés; Lilienblum, Martin; Yan, Zewu; Bourret, Edith; Muller, David A.; Fiebig, Manfred; Selbach, Sverre Magnus; Meier, Dennis (Journal article; Peer reviewed, 2018)
      Domain walls in ferroelectric semiconductors show promise as multifunctional two-dimensional elements for next-generation nanotechnology. Electric fields, for example, can control the direct-current resistance and reversibly ...
    • Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO3 

      Holstad, Theodor S.; Evans, Donald; Ruff, Alexander; Småbråten, Didrik Rene; Schaab, Jakob; Tzschaschel, Christian; Yan, Zewu; Bourret, Edith; Selbach, Sverre Magnus; Krohns, Stephan; Meier, Dennis (Journal article; Peer reviewed, 2018)
      Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, ...
    • Frequency dependent polarisation switching in h-ErMnO3 

      Ruff, Alexander; Li, Ziyu; Loidl, Alois; Schaab, Jakob; Fiebig, Manfred; Cano, Andres; Yan, Zewu; Bourret, Edith; Glaum, Julia; Meier, Dennis; Krohns, Stephan (Journal article; Peer reviewed, 2018)
      We report an electric-field poling study of the geometric-driven improper ferroelectric h-ErMnO3. From a detailed dielectric analysis we deduce the temperature and frequency dependent range for which single-crystalline ...
    • Insulating improper ferroelectric domain walls as robust barrier layer capacitors 

      Puntigam, Lukas; Schultheiss, Jan; Strinic, Ana; Yan, Zewu; Bourret, Edith; Altthaler, Markus; Keszmarki, Istvan; Evans, Donald; Meier, Dennis Gerhard; Krohns, Stephan (Peer reviewed; Journal article, 2021)
      We report the dielectric properties of improper ferroelectric hexagonal (h-)ErMnO3. From the bulk characterization, we observe a temperature and frequency range with two distinct relaxation-like features, leading to high ...
    • Local control of improper ferroelectric domains in YMnO 3 

      Kuerten, Lukas; Krohns, Stephan; Schoenherr, Peggy; Holeczek, Katharina; Pomjakushina, Ekaterina; Lottermoser, Thomas; Trassin, Morgan; Meier, Dennis Gerhard; Fiebig, Manfred (Peer reviewed; Journal article, 2020)
      Improper ferroelectrics are described by two order parameters: a primary one, driving a transition to long-range distortive, magnetic, or otherwise nonelectric order, and the electric polarization, which is induced by the ...
    • Magnetic and geometric control of spin textures in the itinerant kagome magnet Fe3 Sn2 

      Altthaler, Markus; Lysne, Erik Nikolai; Roede, Erik Dobloug; Prodan, Lilian; Tsurkan, Vladimir; Kassem, Mohamed A.; Nakamura, Hiroyuki; Krohns, Stephan; Kézsmárki, István; Meier, Dennis Gerhard (Peer reviewed; Journal article, 2021)
      Magnetic materials with competing magnetocrystalline anisotropy and dipolar energies can develop a wide range of domain patterns, including classical stripe domains, domain branching, and topologically trivial and nontrivial ...