• Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO3 

      Holstad, Theodor S.; Evans, Donald; Ruff, Alexander; Småbråten, Didrik Rene; Schaab, Jakob; Tzschaschel, Christian; Yan, Zewu; Bourret, Edith; Selbach, Sverre Magnus; Krohns, Stephan; Meier, Dennis (Journal article; Peer reviewed, 2018)
      Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, ...
    • FIB lift-out of conducting ferroelectric domain walls in hexagonal manganites 

      Mosberg, Aleksander Buseth; Roede, Erik Dobloug; Evans, Donald; Holstad, Theodor S.; Bourret, Edith; Yan, Zewu; Van Helvoort, Antonius; Meier, Dennis (Journal article; Peer reviewed, 2019)
      A focused ion beam (FIB) methodology is developed to lift out suitable specimens containing charged domain walls in improper ferroelectric ErMnO3. The FIB procedure allows for extracting domain wall sections with well-defined ...
    • FIB lift-out of conducting ferroelectric domain walls in hexagonal manganites 

      Evans, Donald; Meier, Dennis; Mosberg, Aleksander Buseth; Roede, Erik Dobloug; Holstad, Theodor S.; Bourret, Edith; Yan, Zewu; Van Helvoort, Antonius (Journal article; Peer reviewed, 2019)
      A focused ion beam (FIB) methodology is developed to lift out suitable specimens containing charged domain walls in improper ferroelectric ErMnO3. The FIB procedure allows for extracting domain wall sections with well-defined ...