Browsing NTNU Open by Author "Hernes, Magnar"
Now showing items 1-9 of 9
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Challenges and Strategies for a Real-Time Implementation of a Rainflow-Counting Algorithm for Fatigue Assessment of Power Modules
Antonopoulos, Antonios; D'Arco, Salvatore; Hernes, Magnar; Peftitsis, Dimosthenis (Chapter, 2019)The aim of this work is to obtain a reliable estimation of the remaining lifetime of power-electronic modules. Lifetime models provide information on the fatigue durability of power modules under repetitive loading ... -
Challenges of SiC MOSFET Power Cycling Methodology
Göthner, Fredrik T. B. W.; Spro, Ole Christian; Hernes, Magnar; Peftitsis, Dimosthenis (Chapter, 2018)This paper investigates the power cycling methodology for reliability testing of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). Dedicated test benches were designed and built to study this issue. The ... -
Driver stage implementation with improved turn-on and turn-off delay for wide band gap devices
Spro, Ole Christian; Guidi, Giuseppe; Ljøkelsøy, Kjell; Hernes, Magnar; Midtgård, Ole-Morten; Undeland, Tore Marvin (Chapter, 2018)This paper presents a driver topology intended for WBG devices with the goal of improving the switching performance. In particular, the initial delay time of the switching transient was targeted. In high power and high ... -
Experimental Investigation of Operational Reliability of Silicon Carbide MOSFETs
Göthner, Fredrik Tomas Bjørndalen Wergeland (Master thesis, 2017)As the performance of silicon power semiconductors is close to the theoretical limit, other semiconductor materials are sought to improve power electronics system efficiency. Devices made with the wide bandgap material ... -
Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles
Hernes, Magnar; D'Arco, Salvatore; Antonopoulos, Antonios; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2021)Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycles to end of life as a function of stress parameters. These models are normally developed based on experimental data from ... -
Limitations and Guidelines for Damage Estimation Based on Lifetime Models for High-Power IGBTs in Realistic Application Conditions
Antonopoulos, Antonios; D'Arco, Salvatore; Hernes, Magnar; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2020)Statistical lifetime models for high-power IGBTs are developed based on results from power-cycling experiments, and relate lifetime expectancy to the well-defined conditions of a laboratory experiment. In most cases, ... -
Operation of IGBT-Modules in Insulation Liquids - A First Step for Enabling Operation in High Pressure Environments
Holmefjord, Kristian Eikeland (Master thesis, 2015)Theory regarding the main components needed in a subsea converter are provided. Focus is spent on the IGBT and pulse testing are described. A safe and fully functional test cell for high voltage single and double pulse ... -
Power Cycle Testing of Press-Pack IGBT Chips
Frank, Øyvind Bjerke (Master thesis, 2014)In this thesis the power cycling capability of individual press-pack IGBT chips is investigated. Press-pack is a packaging technology used for power semiconductors. For press-packs, both thermal and electrical contact to ... -
Power Cycle Testing of Press-Pack IGBT Chips
Frank, Øyvind Bjerke (Master thesis, 2014)In this thesis the power cycling capability of individual press-pack IGBT chips is investigated. Press-pack is a packaging technology used for power semiconductors. For press-packs, both thermal and electrical contact to ...