• Impurity control in high performance multicrystalline silicon 

      Stokkan, Gaute; Di Sabatino Lundberg, Marisa; Søndenå, Rune; Juel, Mari; Autruffe, Antoine; Adamczyk, Krzysztof; Skarstad, Hanna Vaksvik; Ekstrøm, Kai Erik; Wiig, Marie Syre; You, Chang Chuan; Haug, Halvard; M'hamdi, Mohammed (Journal article; Peer reviewed, 2017)
      We report results from a national project about impurities in high performance multicrystalline silicon: Contamination sources, transport routes, interaction with crystal defects and impact on solar cell efficiency parameters. ...
    • Innovasjonsarbeid i FME-ene, mars 2020 

      Gustavsen, Arild; Kvellheim, Ann Kristin; Medbø, Eirik Gjelsvik; Tomasgard, Asgeir; Coldevin, Grete Håkonsen; Kjølle, Gerd Hovin; Bergmann-Paulsen, Jonas; Brende, Hege; Claussen, Ingrid Camilla; Røkke, Petter Egil; Størset, Sigmund Østtveit; Mølnvik, Mona J.; Haug, Halvard; Marstein, Erik Stensrud (Research report, 2020)
      Fra innledningen. FME ZEN er et senter for miljøvennlig energi som skal utvikle løsninger for framtidens bygninger og byområder – løsninger som bidrar til at nullut-slippssamfunnet kan realiseres. FME ZEN skal vare i åtte ...
    • Studying light-induced degradation by lifetime decay analysis: Excellent fit to solution of simple second-order rate equation 

      Nærland, Tine Uberg; Haug, Halvard; Angelskår, Hallvard; Søndenå, Rune; Marstein, Erik Stensrud; Arnberg, Lars (Journal article; Peer reviewed, 2013)
      Twenty different boron-doped Czochralski silicon materials have been analyzed for light-induced degradation. The carrier lifetime degradation was monitored by an automated quasi-steady-state photoconductance setup with an ...
    • Surface passivation properties of HfO2 thin film on n-Type crystalline Si 

      Cheng, Xuemei; Repo, Paivikki; Haug, Halvard; Perros, Alexander Pyymaki; Marstein, Erik Stensrud; Di Sabatino Lundberg, Marisa; Savin, Hele (Journal article, 2017)
      Atomic layer deposited hafnium oxide is shown to provide good surface passivation of low resistivity, n-type crystalline Si wafers after a low temperature anneal. The surface passivation is related to a fixed negative ...
    • Temporal stability of a-Si:H and a-SiNx:H on crystalline silicon wafers 

      Cheng, Xuemei; Marstein, Erik Stensrud; You, Chang Chuan; Haug, Halvard; Di Sabatino Lundberg, Marisa (Journal article; Peer reviewed, 2017)
      The temporal stability of single layer thin films of hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiNx:H) passivated crystalline silicon wafers have been investigated over 18 months. The thin films were ...
    • The effect of phosphorus diffusion gettering on recombination at grain boundaries in HPMC-silicon wafers 

      Wiig, Marie Syre; Adamczyk, Krzysztof; Haug, Halvard; Ekstrøm, Kai Erik; Søndenå, Rune (Journal article; Peer reviewed, 2016)
      The influence of phosphorus diffusion gettering on recombination at grain boundaries has been studied in a commercially cast high performance multicrystalline silicon block. Wafers from four different heights have been ...