Blar i NTNU Open på forfatter "Cano, Andres"

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    • Ferroelectricity in the multiferroic hexagonal manganites 

      Lilienblum, Martin; Lottermoser, Thomas; Manz, Sebastian; Selbach, Sverre Magnus; Cano, Andres; Fiebig, Manfred (Journal article, 2015)
      Since their discovery in 1963 the hexagonal manganites have consolidated their role as exotic ferroelectrics with astonishing functionalities. Their introduction as room-temperature device ferroelectrics was followed by ...

    • Frequency dependent polarisation switching in h-ErMnO3 

      Ruff, Alexander; Li, Ziyu; Loidl, Alois; Schaab, Jakob; Fiebig, Manfred; Cano, Andres; Yan, Zewu; Bourret, Edith; Glaum, Julia; Meier, Dennis; Krohns, Stephan (Journal article; Peer reviewed, 2018)
      We report an electric-field poling study of the geometric-driven improper ferroelectric h-ErMnO3. From a detailed dielectric analysis we deduce the temperature and frequency dependent range for which single-crystalline ...

    • Functional electronic inversion layers at ferroelectric domain walls 

      Mundy, Julia; Schaab, Jakob; Kumagai, Yu; Cano, Andres; Stengel, Massimiliano; Krug, Ingo P.; Gottlob, Daniel G.; Doganay, Hattice; Holtz, Megan, E.; Held, Rainer; Yan, Zewu; Bourret, Edith; Schneider, Claus M.; Schlom, Darrel G.; Muller, David A.; Ramesh, Ramamoorthy; Spaldin, Nicola A.; Meier, Dennis Gerhard (Journal article; Peer reviewed, 2017)
      Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes ...

    • The Third Dimension of Ferroelectric Domain Walls 

      Roede, Erik Dobloug; Shapovalov, Konstantin; Moran, Thomas; Mosberg, Aleksander Buseth; Yan, Zewu; Bourret, Edith; Cano, Andres; Huey, Bryan D.; Van Helvoort, Antonius; Meier, Dennis (Peer reviewed; Journal article, 2022)
      Ferroelectric domain walls are quasi-2D systems that show great promise for the development of nonvolatile memory, memristor technology, and electronic components with ultrasmall feature size. Electric fields, for example, ...