Browsing NTNU Open by Author "Abuishmais, Ibrahim Abed"
Now showing items 1-3 of 3
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Characterization of body diodes in the-state-of-the-art SiC FETs-Are they good enough as freewheeling diodes?
Tiwari, Subhadra; Abuishmais, Ibrahim Abed; Langelid, John Kåre; Lund, Richard; Midtgård, Ole-Morten; Undeland, Tore Marvin (Chapter, 2018)This paper investigates the switching phenomenon of body diodes in the state-of-the-art discrete SiC FETs. A comparative performance evaluation of the body diodes in planar and double-trench SiC MOS-FETs, and trench cascode ... -
Driving of a GaN enhancement mode HEMT transistor with zener diode protection for high efficiency and low EMI
Spro, Ole Christian; Basu, Supratim; Abuishmais, Ibrahim Abed; Midtgård, Ole-Morten; Undeland, Tore Marvin (Chapter, 2017)The ultra-low gate charge characteristics and low gate voltage limitation of a GaN enhancement mode HEMT in combination with stray circuit elements poses many challenges of driving them in power electronic applications. ... -
SiC Devices for Renewable and High Performance Power Conversion Applications
Abuishmais, Ibrahim Abed; Undeland, Tore Marvin (Journal article; Peer reviewed, 2012)The unique properties of SiC devices enable substantial improvement of existing power conversion systems. SiC devices offer lower conduction and switching losses which increases converter efficiency. With high switching ...