Blar i NTNU Open på forfatter "Reenaas, Turid Worren"

Viser treff 21-31 av 31

    • Molecular beam and pulsed laser deposition of ZnS:Cr for intermediate band solar cells 

      Nematollahi, Mohammadreza; Yang, Xiaodong; Aas, Lars Martin Sandvik; Ghadyani, Zahra; Kildemo, Morten; Gibson, Ursula; Reenaas, Turid Worren (Journal article, 2015)
      We have investigated the structural and optical properties of Cr-doped ZnS (ZnS:Cr) thin films (0–7.5 at.% Cr) for use in intermediate band solar cells. The films were grown on Si(100) in molecular beam epitaxy (MBE) and ...

    • Photoluminescence of InAs/Ga(N)As quantum dot intermediate band solar cells 

      Strand, Ragnhild (Master thesis, 2014)
      In this thesis InAs/Ga(N)As quantum dot intermediate band solar cells (QDIBSCs) are studied using photoluminescence (PL) spectroscopy. The samples in this thesis have been complete QD-IBSCs with doping in the substrate, the ...

    • Pulsed laser ablation and deposition of ZnS:Cr 

      Nematollahi, Mohammadreza; Yang, Xiaodong; Gibson, Ursula; Reenaas, Turid Worren (Journal article; Peer reviewed, 2015)
      We present a method to deposit films with a range of doping concentrations/dilute alloys, from a single target in pulsed laser deposition (PLD). Cr-doped ZnS films were deposited by ablating a target consisting Cr particles ...

    • Pulsed Laser Deposition of Zinc Sulfide Thin Films on Silicon: The influence of substrate orientation and preparation on thin film morphology and texture 

      Heimdal, Carl Philip J (Master thesis, 2014)
      The effect of orientation and preparation of silicon substrates on the growth morphology and crystalline structure of ZnS thin films deposited by pulsed laser deposition (PLD) has been investigated through scanning electron ...

    • Quantitative strain analysis of InAs/GaAs quantum dot materials 

      Vullum, Per Erik; Nord, Magnus Kristofer; Vatanparast, Maryam; Thomassen, Sedsel Fretheim; Boothroyd, Chris; Holmestad, Randi; Fimland, Bjørn-Ove; Reenaas, Turid Worren (Journal article; Peer reviewed, 2017)
      Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch ...

    • Silicon Quantum Dots in a Silicon Dioxide Matrix 

      Kleve, Ellen Elisabeth Sommernes (Master thesis, 2011)
      The aim of the master work was to both produce silicon quantum dots in a SiO2 matrix, and to optically characterize them. The main goal of the optical characterization was to find the band gap of the produced quantum dots, ...

    • Spectroscopic Ellipsometry of InAs/(Al)GaAs Quantum Dots for Intermediate Band Solar Cells 

      Drøyli, Maja Bjerke (Master thesis, 2017)
      As a step towards reducing the CO2 emissions to the atmosphere, generating electricity from renewable energy resources instead of fossil fuels is a good contributor. Solar cells convert energy from sunlight directly into ...

    • Spectroscopic Ellipsometry of MoO3-x 

      Waalekalv, Magnus Langøien (Master thesis, 2016)
      Intermediate band solar cells (IBSC) has a great potential to increase the efficiency of solar cells and reduce the costs of the generated electricity. To realize IBSC that contain one or more sub-band gap in the main band ...

    • Strategy for reliable strain measurement in InAs/GaAs materials from high-resolution Z-contrast STEM images 

      Vatanparast, Maryam; Vullum, Per Erik; Nord, Magnus Kristofer; Zuo, Jian Min; Reenaas, Turid Worren; Holmestad, Randi (Journal article; Peer reviewed, 2017)
      Geometric phase analysis (GPA), a fast and simple Fourier space method for strain analysis, can give useful information on accumulated strain and defect propagation in multiple layers of semiconductors, including quantum ...

    • TEM characterization of Cr-doped ZnS Thin Films for Solar Cell applications 

      Seim, Eivind (Master thesis, 2014)
      The morphology of three Cr-doped zinc sulfide thin films, one deposited by molec-ular beam epitaxy (MBE) and two by pulsed laser deposition (PLD), have beenstudied by transmission electron microscopy (TEM). Investigations ...

    • TEM of Chromium doped Zinc Sulfide Thin Films for Solar Cell Applications. 

      Larsen, Joakim (Master thesis, 2015)
      To Cr dopede ZnS tynnfilmer grodd ved forskjellig temperatur har blitt undersøkt med transmisjons elektronmikroskopi. Krystallstrukturen til filmene ble undersøkt med høyoppløsningsbilder og diffraksjonsmønstre. Begge ...