Blar i NTNU Open på forfatter "Peftitsis, Dimosthenis"
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An Efficient Non-Inverting Buck-Boost Converter with Improved Step Up/Down Ability
Abdel-Rahim, Omar; Chub, Andrii; Blinov, Andrei; Vinnikov, Dmitri; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2022)In this article, a new non-inverting buck-boost converter with superior characteristics in both bucking and boosting is presented. The proposed converter has some distinct features, such as high step-up/-down ability and ... -
Electro-thermal Design of a Solid-State MVDC Circuit Breaker
Giannakis, Andreas; Peftitsis, Dimosthenis (Chapter, 2019)This paper investigates the impact of several design parameters on the electro-thermal performance of a solid-state circuit breaker (CB) for medium voltage DC (MVDC) grids. The parameters studied are the cooling system ... -
Electrothermal design of medium-voltage, high-power DC/DC converters
Rigati, Evangelia (Master thesis, 2020)The ever-increasing demand for electrical energy globally and simultaneously the need for clean energy have played an important role in the penetration of renewable energy sources to the electric power distribution grid. ... -
Evaluation of a Medium-Voltage High-Power Bidirectional Dual Active Bridge DC/DC Converter for Marine Applications
Helland, Sindre (Master thesis, 2017)Due to an increased focus on the development of high-power marine microgrids, new vessels are being installed with large power systems including highly fluctuating loads operating at high efficiency and low emissions. The ... -
Experimental evaluation of SiC-based medium voltage Series Resonant Dual-Active-Bridge three-level DC/DC converters for EV charging
Trochimiuk, Przemyslaw; Miśkiewicz, Rafał; Rabkowski, Jacek; Naresh Kumar, Kaushik; Peftitsis, Dimosthenis (Chapter, 2023)This paper compares two topologies of SeriesResonant Dual-Active-Bridge (SRDAB) converters with threelevel input applied for EV charging from medium voltage (MV) bipolar DC-link. To convert such a voltage with the utilization ... -
Experimental Investigation of Operational Reliability of Silicon Carbide MOSFETs
Göthner, Fredrik Tomas Bjørndalen Wergeland (Master thesis, 2017)As the performance of silicon power semiconductors is close to the theoretical limit, other semiconductor materials are sought to improve power electronics system efficiency. Devices made with the wide bandgap material ... -
Experimental study on fast-switching series-connected SiC MOSFETs
Kopacz, Rafal; Peftitsis, Dimosthenis; Rabkowski, Jacek (Chapter, 2017)This paper presents an experimental study on series-connection of Silicon Carbide MOSFETs. The switching performance of two series-connected SiC MOSFETs rated at 1200 V and having on-state resistances of 80 mΩ was tested ... -
Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles
Hernes, Magnar; D'Arco, Salvatore; Antonopoulos, Antonios; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2021)Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycles to end of life as a function of stress parameters. These models are normally developed based on experimental data from ... -
A Flexible Test Setup for Long-Term Dynamic Characterization of SiC MOSFETs under Soft- and Hard-Switching Conditions
Philipps, Daniel Alexander; Peftitsis, Dimosthenis (Chapter, 2021)Due to the superior material characteristics of Silicon Carbide (SiC), the use of SiC MOSFETs enables higher system power density or efficiency depending on the design perspective. To identify the improvement potential in ... -
Four Level Voltage Active Gate Driver for Loss and Slope Control in SiC MOSFETs
Bratvold Ekren, Halvor; Philipps, Daniel Alexander; Rødal, Gard Lyng; Peftitsis, Dimosthenis (Journal article, 2022)Silicon Carbide power semiconductors exhibit fast dynamic behavior. This facilitates the design of high efficiency and high power density converters. However, the resulting current and voltage changing rates demand extensive ... -
High Gain DC-AC High-Frequency Link Inverter with Improved Quasi-Resonant Modulation
Blinov, Andrei; Korkh, Oleksandr; Chub, Andrii; Vinnikov, Dmitri; Peftitsis, Dimosthenis; Norrga, Staffan; Galkin, Ilya (Peer reviewed; Journal article, 2021)This paper presents a high gain pure sine-wave inverter based on the full-bridge DC-AC high-frequency (HF) link cycloconverter topology for telecom or general-purpose applications. The improved quasi-resonant modulation ... -
High precision scalable power converter for accelerator magnets
Haugen, Krister Leonart; Papastergiou, Konstantinos; Asimakopoulos, Panagiotis; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2022)The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) to be an excellent ... -
High voltage insulation design of coreless, planar PCB transformers for multi-MHz power supplies
Spro, Ole Christian; Mauseth, Frank; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2021)This paper investigates the insulation design for printed, planar, coreless, and high-frequency transformers with high isolation-voltage. By using finite element analysis on 2D axial-symmetry, the transformer circuit ... -
High-voltage and high-frequency design of planar transformer with minimum coupling capacitance
Spro, Ole Christian; Peftitsis, Dimosthenis; Lefranc, Pierre (Chapter, 2019)This paper investigates the design of a planar transformer operating at 6.78 MHz and with a target maximum isolation voltage of 40 kV using 2D FEM simulations as a tool. In addition, minimal coupling capacitance must be ... -
A Hybrid Current- and Voltage-Source Driver for Active Driving of Series-Connected SiC MOSFETs
Ubostad, Tobias Nieckula; Philipps, Daniel Alexander; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2024)The series-connection of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors ( mosfet s) is an attractive way of increasing the blocking voltage capability of a switch. However, due to inherent transient ... -
A Hybrid Current- and Voltage-Source Driver for Active Driving of Series-Connected SiC MOSFETs
Ubostad, Tobias Nieckula; Philipps, Daniel Alexander; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2024)The series-connection of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors ( mosfet s) is an attractive way of increasing the blocking voltage capability of a switch. However, due to inherent transient ... -
Improved SiC MOSFET SPICE model to avoid convergence errors
Hove, Håvard Lefdal; Spro, Ole Christian; Guidi, Giuseppe; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2020)This paper presents improvements to a SPICE model for a commercially available SiC MOSFET to avoid convergence errors while still providing reliable simulation results. Functionality in the internal part of the model that ... -
Improving distribution transformer reliability in micro grids with distributed generation
Berg, Sondre Johan Kjellin; Vadlamudi, Vijay Venu; Peftitsis, Dimosthenis (Chapter, 2022)This paper considers a simplified microgrid derived from the CIGRE benchmark, and investigates the impact of harmonic loading of the distribution transformer on its reliability. As a means to alleviate the considerable ... -
Interface Converters for Residential Battery Energy Storage Systems: Practices, Difficulties and Prospects
Galkin, Ilya; Blinov, Andrei; Vorobyov, Maxim; Bubovich, Alexander; Saltanovs, Rodions; Peftitsis, Dimosthenis (Peer reviewed; Journal article, 2021)Recent trends in building energy systems such as local renewable energy generation have created a distinct demand for energy storage systems to reduce the influence and dependency on the electric power grid. Under the ... -
Introduction of Silicon Carbide in High-Power Converters Using a Hybrid Si-SiC Switch
Lars-Kristian Njåstad (Master thesis, 2020)Denne masteroppgaven har undersøkt bruken av halvleder komponenter med høy båndbredde (WBG) i høyeffektsomformere. Sammenlignet med tradisjonelle halvledere, som for eksempel silisium (Si), så har WBG halvledere som for ...