%PDF-1.5
%
1 0 obj
<>stream
application/pdfIEEEIEEE Journal on Exploratory Solid-State Computational Devices and Circuits;2018;4;1;10.1109/JXCDC.2018.2817541Analog circuitbenchmarkingcompact modelsteep subthreshold swing (SS)tunnel field-effect transistor (TFET)ultralow-voltage circuitTunnel FET Analog Benchmarking and Circuit DesignHao LuPaolo PalettiWenjun LiPatrick FayTrond YtterdalAlan Seabaugh
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits19 June 20181410.1109/JXCDC.2018.281754125
endstream
endobj
2 0 obj
<>
endobj
3 0 obj
<>
endobj
4 0 obj
<>stream
HkE'Ä"lNtz$'ڋ=h``%UD+تH,a0֖46o544y}[d}vw~?0AްVq2rX RFZ!퇻o5G9N-[*0X^nPf`?y~wmLpRs. (9urX*Nf[[ dPH:\Ӕ0sש8p`>29:3;?|`xO٫3]J)ι: Xz`u8my[,n
B)#cpQɃ^:Z5|I?f.lmxzܥ!C JG\ VY b,2:,T~9>>u#-|6
uiwzF7ܥ!C JG\ VY C9?9v/[ԍ U;;+G0ݳԙ8Ǿh/u K)9BP K: n'*Wŭ X(euL]^?v;{ԍ qw.RQf_Ssiv!C JG\ VY b,2:^^7~yH^̙j6Э&ui'wQRs!u @ɱVq2{ru fRFZ!.m}/;Ooڡg6fǎk/?g|'ȳԁ(\A Pr,=U̞\v15 c1u8l~<f߯hZ6̦MWFF]YiRnԍſ
~`ׯWR7Rs!u @ɱVq2{ֱ[KO @0JiSCkk}nhz7|
guF굗Nl7v:=u#H)9BP K: n'g c1u8?^ďQ7J56}̍7V:fxF:~FnJ)ι:'
endstream
endobj
5 0 obj
<>stream
Hhe gv7j]dГKZI J#?B-SrBh4*q4aGDΤwJDnv.-M7ޯ^99;w}=߿d>8'[[G*+#.\5kz> n,Ș1z#pi4VOLLlڿ5LJYݎh"z#pرckQ]]]\\L)a=>SS)wnC/ @! c=w\' \