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dc.contributor.authorRicharz, Leonie
dc.contributor.authorHe, J.
dc.contributor.authorLudacka, Ursula
dc.contributor.authorBourret, E.
dc.contributor.authorYan, Z.
dc.contributor.authorVan Helvoort, Antonius
dc.contributor.authorMeier, Dennis
dc.date.accessioned2024-03-08T12:31:37Z
dc.date.available2024-03-08T12:31:37Z
dc.date.created2023-05-26T10:27:18Z
dc.date.issued2023
dc.identifier.citationApplied Physics Letters. 2023, 122 (16), .en_US
dc.identifier.issn0003-6951
dc.identifier.urihttps://hdl.handle.net/11250/3121581
dc.description.abstractMoiré physics plays an important role in characterization of functional materials and engineering of physical properties in general, ranging from strain-driven transport phenomena to superconductivity. Here, we report on the observation of moiré fringes in conductive atomic force microscopy (cAFM) scans gained on the model ferroelectric Er(Mn,Ti)O3. By performing a systematic study of the impact of key experimental parameters on the emergent moiré fringes, such as scan angle and pixel density, we demonstrate that the observed fringes arise due to a superposition of the applied raster scanning and sample-intrinsic properties, classifying the measured modulation in conductance as a scanning moiré effect. Our findings are important for the investigation of local transport phenomena in moiré engineered materials by cAFM, providing a general guideline for distinguishing extrinsic from intrinsic moiré effects. Furthermore, the experiments provide a possible pathway for enhancing the sensitivity, pushing the resolution limit of local transport measurements by probing conductance variations at the spatial resolution limit via more long-ranged moiré patterns.en_US
dc.language.isoengen_US
dc.publisherAIPen_US
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.titleMoiré fringes in conductive atomic force microscopyen_US
dc.title.alternativeMoiré fringes in conductive atomic force microscopyen_US
dc.typeJournal articleen_US
dc.typePeer revieweden_US
dc.description.versionpublishedVersionen_US
dc.source.volume122en_US
dc.source.journalApplied Physics Lettersen_US
dc.source.issue16en_US
dc.identifier.doi10.1063/5.0145173
dc.identifier.cristin2149487
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode2


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Navngivelse 4.0 Internasjonal
Except where otherwise noted, this item's license is described as Navngivelse 4.0 Internasjonal