Soft switching loss measurements of a 1.2 kV SiC MOSFET module by both electrical and calorimetric methods for high frequency applications

Abstract

This paper investigates the soft switching performance of a 1.2 kV half-bridge SiC MOSFET module, FCA150XB120 from Sanrex. The selected module has both MOSFET and diode integrated on a single chip. A single pulse control circuit is employed in a half-bridge series resonant inverter topology with a split dc-link and an LC load in order to emulate a real inverter operation. This results in a square wave output voltage and a sine wave output current where the switching is performed before the zero crossing of current (an inductive mode). In addition, a calorimetric loss measurement is carried out in a 78 kW full-bridge resonant inverter switching at about 200 kHz yielding an efficiency of 99 %. Moreover, this paper aims to find the highest possible switching frequency achievable with the selected module. Besides, the electrically measured loss is compared with the calorimetrically measured loss and the possible reasons for discrepancies are discussed.