Molecular beam and pulsed laser deposition of ZnS:Cr for intermediate band solar cells
Nematollahi, Mohammadreza; Yang, Xiaodong; Aas, Lars Martin Sandvik; Ghadyani, Zahra; Kildemo, Morten; Gibson, Ursula; Reenaas, Turid Worren
Journal article
Submitted version
Date
2015Metadata
Show full item recordCollections
- Institutt for fysikk [2707]
- Publikasjoner fra CRIStin - NTNU [38672]
Original version
Solar Energy Materials and Solar Cells. 2015, 141 322-330. 10.1016/j.solmat.2015.06.004Abstract
We have investigated the structural and optical properties of Cr-doped ZnS (ZnS:Cr) thin films (0–7.5 at.% Cr) for use in intermediate band solar cells. The films were grown on Si(100) in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) equipments. Introducing Cr into ZnS resulted in Cr related subbandgap absorption, but also reduced the grain size. The sub-bandgap absorption increased with increasing Cr content, and with increasing growth temperature, but did not depend on the growth method. In contrast, the crystallinity depended strongly on the growth method, and smoother and highly textured films were obtained by PLD. The data indicate that stacking faults are present in all films.