Quantitative strain analysis of InAs/GaAs quantum dot materials
Vullum, Per Erik; Nord, Magnus Kristofer; Vatanparast, Maryam; Thomassen, Sedsel Fretheim; Boothroyd, Chris; Holmestad, Randi; Fimland, Bjørn-Ove; Reenaas, Turid Worren
Journal article, Peer reviewed
Published version
Permanent lenke
http://hdl.handle.net/11250/2450964Utgivelsesdato
2017Metadata
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- Institutt for elektroniske systemer [2288]
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Originalversjon
10.1038/srep45376Sammendrag
Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattice in a wide region that extends several nm into the GaAs spacer layer below and above the QDs. Finally, we show how V-shaped dislocations originating at the QD/GaAs interface efficiently remove most of the lattice mismatch induced tetragonal distortions in and around the QD.